MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100C
50
A
BVCBO
IC=100A
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200A, RS=10
8.0
dB
f=10Hz to 15.7kHz
CMUT5551
NPN SILICON TRANSISTOR
SOT-523 CASE
Central
Semiconductor Corp.
TM
R0 (28-October 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5551
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
MARKING CODE: 55C
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