PROCESS

CP178

Power Transistor

NPN Darlington Transistor

PRINCIPAL DEVICE TYPES

2N6059

Die Size

131 x 131 MILS

Die Thickness

12.5 �1.0 MILS

Emitter Bonding Pad Area

27 x 36 MILS

Base Bonding Pad Area

20 x 37 MILS

Top Side Metalization

Al - 50,000�

Back Side Metalization

Ag - 10,000�

GEOMETRY

PROCESS DETAILS

BACKSIDE COLLECTOR

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

R0 (12 -June 2003)

Central

Semiconductor Corp.

BACKSIDE COLLECTOR