145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
MJE15030
GEOMETRY
PROCESS DETAILS
R0 (4- April 2005)
Process
MULTIEPITAXIAL MESA
Die Size
120 x 145 MILS
Die Thickness
13 MILS
Base Bonding Pad Area
20 x 45 MILS
Emitter Bonding Pad Area
14 x 70 MILS
Top Side Metalization
Al - 50,000
Back Side Metalization
Cr / Ni / Ag - 10,000
GROSS DIE PER 4 INCH WAFER
640
Central
Semiconductor Corp.
TM
PROCESS
CP245
Power Transistor
NPN, 8.0A Power Transistor Chip
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