Central

Semiconductor Corp.

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CP275

Power Transistor

4.0 Amp NPN Silicon Power Transistor Chip

PRINCIPAL DEVICE TYPES

MJE13005

GEOMETRY

PROCESS DETAILS

BACKSIDE COLLECTOR

R1 (28-March 2005)

Die Size

105 x 105 MILS

Die Thickness

8.5 MILS

Base Bonding Pad Area

32 x 19 MILS

Emitter Bonding Pad Area

28 x 22 MILS

Top Side Metalization

Al - 45,000Å

Back Side Metalization

Ti/Ni/Ag - (300Å, 1,000Å, 10,000Å)

GROSS DIE PER 4 INCH WAFER