145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP349
Power Transistor
NPN- High Voltage Transistor Chip
PRINCIPAL DEVICE TYPES
BUY49S
BSW68
GEOMETRY
PROCESS DETAILS
R0 (12 - June 2006)
Process
EPITAXIAL PLANAR
Die Size
51 x 51 MILS
Die Thickness
9.1 MILS
Base Bonding Pad Area
7.9 x 15.7 MILS
Emitter Bonding Pad Area
7.9 x 15.7 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Ti/Ni/Ag - 2000/3000/20000
GROSS DIE PER 5 INCH WAFER
6,480
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