PROCESS
CP353V
Small Signal Transistors
NPN - High Current Transistor Chip
PRINCIPAL DEVICE TYPES
CZT853
Process
EPITAXIAL PLANAR
Die Size
66 x 66 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Area
7.9 x 7.9 MILS
Emitter 1 Bonding Pad Area
7.9 x 9.5 MILS
Emitter 2 Bonding Pad Area
7.9 x 9.5 MILS
Top Side Metalization
Al-Si 30,000
Back Side Metalization
Au 12,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
R0 (23- September 2005)
GROSS DIER PER 5 INCH WAFER
3,878
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