Central
Semiconductor Corp.
TM
PROCESS
CP566
Small Signal Transistor
PNP - Silicon Chopper Transistor Chip
PRINCIPAL DEVICE TYPES
CMPT404A
MPS404A
Process
EPITAXIAL PLANAR
Die Size
31.5 x 31.5 MILS
Die Thickness
11 MILS
Base Bonding Pad Area
7.8 x 6.2 MILS
Emitter Bonding Pad Area
8.0 x 5.3 MILS
Top Side Metalization
Al - 12,000
Back Side Metalization
Au - 10,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
BACKSIDE COLLECTOR
GEOMETRY
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
11,380
Central
Semiconductor Corp.
TM
PROCESS
CP566
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
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