145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
2N6028
GEOMETRY
PROCESS DETAILS
R3 (4- February 2004)
Process
PLANAR PASSIVATED
Die Size
27.5 x 27.5 MILS
Die Thickness
11 MILS
Anode Bonding Pad Area
7.1 x 5.1 MILS
Cathode Bonding Pad Area
7.1 x 5.1 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 13,000
GROSS DIE PER 4 INCH WAFER
14,930
Central
Semiconductor Corp.
TM
PROCESS
CP624
Programmable
Unijunction Transistor
BACKSIDE GATE
Central
Semiconductor Corp.
TM
PROCESS
CP624
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (4- February 2004)
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