Central

Semiconductor Corp.

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CPD17

Ultra Fast Rectifier

3 Amp Glass Passivated Rectifier Chip

PRINCIPAL DEVICE TYPES

1N5802 thru 1N5806

UES1101 thru UES1106

CMR3U-01 Series

GEOMETRY

PROCESS DETAILS

BACKSIDE CATHODE

R2 (19-September 2003)

Process

GLASS PASSIVATED MESA

Die Size

87 x 87 MILS

Die Thickness

12.2 MILS

Anode Bonding Pad Area

69.5 x 69.5 MILS

Top Side Metalization

Au - 5,000�

Back Side Metalization

Au - 2,000�

GROSS DIE PER 4 INCH WAFER