145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PRINCIPAL DEVICE TYPES

1N5807 thru 1N5811

UES1301 thru UES1306
UES1401 thru UES1403

CUDD8-02 Series

GEOMETRY

PROCESS DETAILS

BACKSIDE CATHODE

R2 (19-September 2003)

Process

GLASS PASSIVATED MESA

Die Size

98 x 98 MILS

Die Thickness

12.2 MILS

Anode Bonding Pad Area

82.5 x 82.5 MILS

Top Side Metalization

Au - 5,000�

Back Side Metalization

Au - 2,000�

GROSS DIE PER 4 INCH WAFER

1,170

Central

Semiconductor Corp.

PROCESS

CPD18

Ultra Fast Rectifier

8 Amp Glass Passivated Rectifier Chip