Central
Semiconductor Corp.
TM
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD26
Fast Recovery Rectifier
8 Amp Glass Passivated Rectifier Chip
PRINCIPAL DEVICE TYPES
CR6AF1GPP Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R1 (1-August 2002)
Process
GLASS PASSIVATED MESA
Die Size
98 x 98 MILS
Die Thickness
10.6 MILS
Anode Bonding Pad Area
82.5 x 82.5 MILS
Top Side Metalization
Au - 5,000
Back Side Metalization
Au - 2,000
GROSS DIE PER 4 INCH WAFER
1,170
Central
Semiconductor Corp.
TM
The Typical Electrical Characteristics data
for this chip is currently being revised.
For the latest updated data for this Chip Process,
please visit our website at:
www.centralsemi.com/chip
PROCESS
CPD26
Typical Electrical Characteristics
R1 (1-August 2002)
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
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