Central
Semiconductor Corp.
TM
PROCESS
CPD64
Low Leakage Diode
Low Leakage Diode Chip
PRINCIPAL DEVICE TYPES
CMPD3003
1N3595
Process
EPITAXIAL PLANAR
Die Size
17.5 x 17.5 MILS
Die Thickness
8.0 MILS
Anode Bonding Pad Area
8.0 MILS DIAMETER
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 6,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
BACKSIDE CATHODE
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
36,890
Central
Semiconductor Corp.
TM
PROCESS
CPD64
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
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