Central

Semiconductor Corp.

PROCESS

CPD75

Schottky Rectifier

5 Amp Schottky Barrier Rectifier Chip

PRINCIPAL DEVICE TYPES

CZSH5-40

CZSH10-40C (Dual Chip)

Die Size

72.5 x 72.5 MILS

Die Thickness

11.8 MILS

Anode Bonding Pad Area

63.8 x 63.8 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 18,000�

GEOMETRY

PROCESS DETAILS

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

R1 (1-August 2002)

GROSS DIE PER 4 INCH WAFER

2,160

The Typical Electrical Characteristics data for

this chip is currently being revised.

For the latest updated data

for this Chip Process,

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