PROCESS

CPD92V

Schottky Diode

High Voltage Schottky Diode Chip

PRINCIPAL DEVICE TYPES

CMDD6263
CMKD6263
CMLD6263 Series
CMOD6263
CMPD6263 SERIES
CMSD6263 SERIES
CMUD6263 Series
1N6263

GEOMETRY

PROCESS DETAILS

BACKSIDE CATHODE

R0 (13 -February 2006)

Process

EPITAXIAL PLANAR

Die Size

9.0 x 9.0 MILS

Die Thickness

7.1 MILS

Anode Bonding Pad Area

4.8 MILS DIAMETER

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 12,000�

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:

(631) 435-1110

Fax: (631) 435-1824
www.centralsemi.com

GROSS DIE PER 4 INCH WAFER