145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPQ057
TRIAC
2.0 Amp, 600 Volt TRIAC Chip
PRINCIPAL DEVICE TYPES
CQ92-2M
CQ223-2M
CQ89-2M
GEOMETRY
PROCESS DETAILS
R0 (29 -March 2005)
BACKSIDE MT2
Process
Glass Passivated Mesa
Die Size
57 x 57 MILS
Die Thickness
8.6 MILS 0.6 MILS
MT1 Bonding Pad Area
28 x 16 MILS
Gate Bonding Pad Area
10 x 9 MILS
Top Side Metalization
Al - 45,000
Back Side Metalization
Al/Mo/Ni/Ag - 32,000
GROSS DIE PER 4 INCH WAFER
3,374
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