PROCESS

CPZ25

Zener Diodes

1.5 W Zener Diode Chip

PRINCIPAL DEVICE TYPES

1N5913B

THRU

1N5956B

Process

EPITAXIAL PLANAR

Die Size

33.5 X 33.5 MILS

Die Thickness

8.0 MILS

Anode Bonding Pad Area

23 X 23 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 12,000�

PROCESS DETAILS

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

ANODE

GEOMETRY

BACKSIDE CATHODE

R0 (20-June 2002)

GROSS DIE PER 4 INCH WAFER

10,070