CQ202-4B
CQ202-4D
CQ202-4M
CQ202-4N
4.0 AMP TRIAC
200 THRU 800 VOLTS
TO-202 THYRISTOR CASE
Central
Semiconductor Corp.
TM
R5 (27-June 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4B
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQ202
CQ202
CQ202
CQ202
-4B
-4D
-4M
-4N
UNITS
Peak Repetitive Off-State Voltage
VDRM
200
400
600
800
V
RMS On-State Current (TC=80C)
IT(RMS)
4.0
A
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
40
A
Peak Non-Repetitive Surge Current (t=10ms)
ITSM
35
A
I
2
t Value for Fusing (t=10ms)
I
2
t
6.0
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
60
C/W
Thermal Resistance
JC
7.5
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
10
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III
6.6
20
mA
IGT
VD=12V, QUAD IV
35
50
mA
IH
RGK=1K
5.2
25
mA
VGT
VD=12V, QUAD I, II, III
1.1
1.5
V
VGT
VD=12V, QUAD IV
2.0
2.5
V
VTM
ITM=6.0A, tp=380s
1.25
1.60
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
5.0
V/s
MIN
MAX
MIN
MAX
A
0.057
0.061
1.45
1.55
B
0.019
0.021
0.49
0.52
C
0.175
0.180
4.44
4.56
D
0.376
0.388
9.55
9.85
E
0.118
0.134
3.00
3.40
F (DIA)
0.124
0.126
3.15
3.20
G
0.035
0.043
0.90
1.10
H
0.023
0.028
0.59
0.71
J
0.098
0.102
2.49
2.59
K
0.459
0.559
11.66
14.21
L
0.280
0.301
7.12
7.65
M
0.406
0.425
10.30
10.80
N
0.024
0.059
0.60
1.50
TO-202 Thyristor (REV: R0)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
TO-202 THYRISTOR CASE - MECHANICAL OUTLINE
CQ202-4B
CQ202-4D
CQ202-4M
CQ202-4N
4.0 AMP TRIAC
200 THRU 800 VOLTS
R5 (27-June 2005)
LEAD CODE:
1) MT1
2) MT2
3) GATE
NOTE: TAB IS COMMON
TO PIN 2 (MT2)
MARKING CODE:
FULL PART NUMBER
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