CS18B
CS18D
CS18M
CS18N
SILICON CONTROLLED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
TO-18 CASE
Central
Semiconductor Corp.
TM
R1 (18-August 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS18B series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed
for control systems and sensing circuit
applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
CS18B CS18D CS18M CS18N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
200
400
600
800
V
RMS On-State Current (TC=90C)
IT(RMS)
1.0
A
Nonrept. On-State Current
ITSM
10
A
Fusing Current (t=10ms)
I
2
t
0.24
A
2
s
Peak Gate Current (t=10s)
IGM
1.0
A
Peak Gate Dissipation (t=10s)
PGM
2.0
W
Gate Dissipation
PG (AV)
0.1
W
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JC
32
C/W
Thermal Resistance
JA
200
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0K
1.0
A
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0K, TC=125C
0.1
mA
VTM
IT=2.0A
1.6
2.15
V
IGT
VD=12V, RL=10
20
200
A
VGT
VD=12V, RL=10
0.65
0.8
V
IH
RGK=1.0K
0.5
5.0
mA
dv/dt
VD=0.67V x VDRM, RGK=1.0K, TC=125C
25
V/s
MIN
MAX
MIN
MAX
A (DIA)
0.209 0.230
5.31
5.84
B (DIA)
0.178 0.195
4.52
4.95
C
-
0.030
-
0.76
D
0.170 0.210
4.32
5.33
E
0.500
-
12.70
-
F (DIA)
0.016 0.019
0.41
0.48
G (DIA)
H
I
0.036 0.046
0.91
1.17
J
0.028 0.048
0.71
1.22
TO-18 (REV: R1)
0.100
2.54
0.050
1.27
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
TO-18 CASE - MECHANICAL OUTLINE
CS18B
CS18D
CS18M
CS18N
SILICON CONTROLLED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
R1 (18-August 2004)
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
MARKING CODE:
FULL PART NUMBER
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