CSD-4M
CSD-4N
4.0 AMP SCR
600 THRU 800 VOLTS
DPAK THYRISTOR CASE
Central
Semiconductor Corp.
TM
R0 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-4M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
CSD
CSD
SYMBOL
-4M
-4N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
600
800
V
RMS On-State Current (TC=85C)
IT(RMS)
4.0
A
Peak One Cycle Surge (t=10ms)
ITSM
30
A
I
2
t Value for Fusing (t=10ms)
I
2
t
4.5
A
2
s
Peak Gate Power (tp=20s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=20s)
IGM
1.2
A
Critical Rate of Rise of On-State Current
di/dt
50
A/s
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM, RGK=1K
10
A
IDRM, IRRM
Rated VDRM, VRRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, RL=10
20
38
200
A
IH
IT=50mA, RGK=1K
0.25
2.0
mA
VGT
VD=12V, RL=10
0.55
0.8
V
VTM
ITM=8.0A, tp=380s
1.6
1.8
V
dv/dt
VD=
2
/
3
VDRM, RGK=1K, TC=125C
10
V/s
MIN
MAX
MIN
MAX
A
0.086
0.094
2.18
2.39
B
0.018
0.032
0.46
0.81
C
0.035
0.050
0.89
1.27
D
0.205
0.228
5.21
5.79
E
0.047
0.055
1.20
1.40
F
0.018
0.024
0.45
0.60
G
0.250
0.268
6.35
6.81
H
0.205
0.215
5.20
5.46
J
0.235
0.245
5.97
6.22
K
0.100
0.108
2.55
2.74
L
0.025
0.040
0.64
1.02
M
0.025
0.035
0.64
0.89
N
DPAK THYRISTOR (REV: R0)
2.28
0.090
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
DPAK THYRISTOR CASE - MECHANICAL OUTLINE
CSD-4M
CSD-4N
4.0 AMP SCR
600 THRU 800 VOLTS
R0 (20-May 2004)
LEAD CODE:
1) CATHODE
2) ANODE
3) GATE
4) ANODE
MARKING CODE:
FULL PART NUMBER
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