CSDD-12M
CSDD-12N
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
D
2
PAK CASE
Central
Semiconductor Corp.
TM
R1 (24-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSDD-12M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CSDD
CSDD
-12M
-12N
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
600
800
V
RMS On-State Current (TC=90C)
IT(RMS)
12
A
Peak One Cycle Surge (t=10ms)
ITSM
110
A
I
2
t Value for Fusing (t=10ms)
I
2
t
60
A
2
s
Peak Gate Power (tp=10s)
PGM
40
W
Average Gate Power Dissipation
PG (AV)
1.0
W
Peak Forward Gate Current (tp=10s)
IFGM
4.0
A
Peak Forward Gate Voltage (tp=10s)
VFGM
16
V
Peak Reverse Gate Voltage (tp=10s)
VRGM
5.0
V
Critical Rate of Rise of On-State Current
di/dt
100
A/s
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
60
C/W
Thermal Resistance
JC
2.5
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM
10
A
IDRM, IRRM
Rated VDRM, VRRM, TC=125C
3.0
mA
IGT
VD=12V, RL=10
3.5
15
mA
IH
IT=100mA
8.7
20
mA
VGT
VD=12V, RL=10
0.64
1.50
V
VTM
ITM=24A, tp=380s
1.21
1.60
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
200
V/s
MIN
MAX
MIN
MAX
A
0.163 0.189
4.14
4.80
B
0.045 0.055
1.14
1.40
C
0.000 0.010
0.00
0.25
D
0.012 0.028
0.30
0.70
E
0.386 0.409
9.80
10.40
F
0.378 0.417
9.60
10.60
G
0.335 0.358
8.50
9.10
H
0.197 0.236
5.00
6.00
J
0.093 0.108
2.35
2.75
K
0.030 0.035
0.75
0.90
D2PAK (REV: R2)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
D
2
PAK CASE - MECHANICAL OUTLINE
CSDD-12M
CSDD-12N
SILICON CONTROLLED RECTIFIER
12 AMP, 600 THRU 800 VOLTS
R1 (24-September 2004)
LEAD CODE:
1) CATHODE
2) ANODE
3) GATE
4) ANODE
MARKING CODE:
FULL PART NUMBER
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