PRELIMINAR
Y
PRELIMINAR
Y
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
20
V
Average Forward Current
IF
0.5
A
Power Dissipation
PD
0.9
W*
Peak Forward Surge Current (8.3ms)
IFSM
3.0
A
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
139
C/W*
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=10V
0.2
1.0
mA
BVR
IR=1.0mA
20
V
VF
IF=100A
0.030
0.060
V
VF
IF=500A
0.065
0.100
V
VF
IF=10mA
0.145
0.200
V
VF
IF=100mA
0.235
0.280
V
VF
IF=200mA
0.280
0.330
V
VF
IF=500mA
0.390
0.460
V
CT
TBD
pF
CTLSH05-2M521HL
SURFACE MOUNT
ULTRA LOW VF
SILICON
SCHOTTKY DIODE
TINY LEADLESS MODULE
TM
TLM521 CASE
Central
Semiconductor Corp.
TM
R0 (20-January 2006)
* FR-4 Epoxy PCB with copper mounting pad area of 33mm
2
.
MARKING CODE: CF
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLSH05-2M521HL is a high performance HiLoTM 0.5A
Schottky diode designed for applications where small
size and operational efficiency are the prime
requirements. With a maximum power dissipation of
0.90W, and a very small package footprint (comparable
to the SOT-563), this leadless package design is capable
of dissipating over 3 times the power of similar devices in
comparable sized surface mount packages.
FEATURES:
HiLoTM Device Characteristics
(High Current/Low VF)
Ultra Low Forward Voltage Drop
(VF=0.39V Typ. @ 0.5A)
High Thermal Efficiency
Small TLM 2x1mm case
APPLICATIONS:
DC/DC Converters
Voltage Clamping
Protection Circuits
Battery Powered Portable
Equipment
PRELIMINAR
Y
Central
Semiconductor Corp.
TM
TLM521 CASE - MECHANICAL OUTLINE
CTLSH05-2M521HL
SURFACE MOUNT
ULTRA LOW VF
SILICON
SCHOTTKY DIODE
TINY LEADLESS MODULE
TM
R0 (20-January 2006)
LEAD CODE:
1) CATHODE
2) CATHODE
3) CATHODE
4) ANODE
5) ANODE
MARKING CODE: CF
Suggested mounting pad layout
for maximum power dissipation
(Dimensions in mm)
For standard mounting refer
to TLM521 Package Details
PDF 
ZIP