MPQ2222
MPQ2222A
NPN SILICON QUAD TRANSISTOR
TO-116 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPQ2222, MPQ2222A types are comprised of four independent Silicon NPN
Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base
Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base
Voltage
VEBO
5.0
V
Collector Current
IC
500
mA
Power Dissipation (Each Transistor)
PD 650
mW
Power Dissipation (Total Package)
PD
1.9
W
Operating and Storage
Junction
Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance (Total Package)
JA
66
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
MPQ2222
MPQ2222A
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
ICBO
VCB=50V
50
nA
ICBO
VCB=60V
10
nA
IEBO
VEB=3.0V
100
100
nA
BVCBO
IC=10
A
60
75
V
BVCEO
IC=10mA
40
40
V
BVEBO
IE=10
A
5.0
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.4
0.3
V
VCE(SAT)
IC=300mA, IB=30mA
1.6
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
0.6 1.2
V
VBE(SAT)
IC=300mA, IB=30mA
2.6
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=100A
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
75
hFE
VCE=10V, IC=150mA
100
300
100 300
hFE
VCE=10V, IC=300mA
30
hFE
VCE=10V, IC=500mA
40
fT
VCE=20V, IC=20mA, f=100MHz
200
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
30
30
pF
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
35
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
285
ns
R1
145 Adams Ave., Hauppauge, NY 11788 USA
Phone (631) 435-1110 FAX (631) 435-1824
www.centralsemi.com
Manufacturers of World Class Discrete Semiconductors
TO-116 CASE - MECHANICAL OUTLINE
.220(5.59)
.280(7.11)
14
1
8
7
MAXIMUM
.325(8.26)
15
0
.008(0.20)
.015(0.38)
.785(19.94)
.660(16.76)
MAXIMUM
.200(5.08)
.015(0.38)
.023(0.58)
.030(0.76)
.070(1.78)
.290(7.37)
.310(7.87)
MINIMUM
.020(0.51)
.100(2.54)
MINIMUM
.090(2.29)
.110(2.79)
.190(4.83)
.210(5.33)
All Dimensions in Inches (mm).
PIN CONFIGURATION
8
1
7
Q
Q
Q
Q
C
C
B
E
E
B
C
C
B
E
E
B
1
4
2
3
14
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