60
N-Channel Enhancement Mode Field Effect Transistor
March 1998
FEATURES
60V , 15A , R
DS(ON)
=80m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
15
A
I
DM
45
A
Drain-Source Diode Forward Current
I
S
15
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
62.5
/W
C
/W
C
R
DS(ON)
=85m
@V
GS
=5.0V.
CEP4060AL/CEB4060AL
@Tc=25 C
Derate above 25 C
50
0.3
W/ C
S
G
D
TO-263(DD-PAK)
TO-220
CEB SERIES
CEP SERIES
G
S
S
D
D
G
4-67
4
CEP4060AL/CEB4060AL
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
60
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V, V
GS
= 0V
25
A
Gate-Body Leakage
I
GSS
V
GS
= 16V, V
DS
= 0V
100
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1
1.5
2
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=15A
63
80
m
V
GS
= 5V, I
D
=7.5A
78
85
m
On-State Drain Current
I
D(ON)
V
GS
= 5V, V
DS
= 10V
15
11
A
S
Forward Transconductance
FS
g
V
DS
= 10V, I
D
= 7.5A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
480
P
F
130
P
F
P
F
30
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V,
I
D
=15A,
V
GS
= 5V,
R
GEN
=51
8
20
ns
ns
ns
ns
140
250
30
100
60
150
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=48V, I
D
= 15A,
V
GS
=10V
13
17
nC
nC
nC
2.6
3.2
Fall Time
4-68
4
CEP4060AL/CEB4060AL
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =7.5A
0.9
1.3
V
b
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
I
D
,
D
r
a
in
Current(A)
C
,
Capacitance
(pF)
I
D
,
D
r
a
in
Current
(A)
25 C
-55 C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
V
GS
=5V
Tj=125 C
-55 C
25 C
15
10
5
0
1
2
3
4
5
6
20
Tj=125 C
Dr
ain-Source
On-Resistance
R
DS(ON)
,
Nor
maliz
ed
4
4-69
Ciss
Coss
Crss
900
750
600
450
300
150
0
0
10
20
30
40
50
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,9,8,7,6,5,4V
V
GS
=3V
4-70
8
10
6
4
2
0
0
2
4
6
8
10
12
14
16
V
DS
=48V
I
D
=15A
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
CEP4060AL/CEB4060AL
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
4-71
4
INVERTED
Transient
Thermal
Impedance
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
r(t),Normalized
Effective
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
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