N-Channel Enhancement Mode Field Effect Transistor
CEP60N10/CEB60N10
FEATURES
100V, 60A, R
DS(ON)
= 23.5m
@V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
V
DS
V
GS
I
D
P
D
I
DM
100
1.3
200
240
60
20
V
W
A
A
V
W/ C
4 - 114
S
G
D
G
S
S
D
D
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
Lead free product is acquired.
2004.December
http://www.cetsemi.com
PRELIMINARY
Operating and Store Temperature Range
Single Pulsed Avalanche Energy
d
I
AS
T
J
,T
stg
-55 to 175
46
A
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Parameter
Symbol
Limit
Units
C/W
C/W
62.5
0.75
R
JC
R
JA
Single Pulsed Avalanche Current
d
E
AS
148
mJ
CEP60N10/CEB60N10
Electrical Characteristics
Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forwand Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BV
DSS
I
DSS
I
GSSR
I
GSSF
23.5
2
4
-100
100
1
m
V
nA
nA
A
V
S
4 - 115
Gate Body Leakage Current, Reverse
On Characteristics
b
Dynamic Characteristics
c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
Test Condition
V
GS
= 0V, I
D
= 250
A
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Typ
Max
100
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250
A
V
GS
= 10V, I
D
= 30A
V
DS
= 15V, I
D
= 30A
V
DD
= 50V, I
D
= 30A,
V
GS
= 10V, R
GEN
= 2.5
V
DS
= 80V, I
D
= 30A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
V
GS
= 0V, I
S
= 60A
1620
670
240
19
17
40
13
28
34
80
26
65
19
23
84
60
1.3
26
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
19
4
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 700
H, I
AS
= 46A, V
DD
= 25V, R
G
= 25
,
Starting T
J
= 25 C
CEP60N10/CEB60N10
4 - 116
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Ciss
Coss
Crss
2400
2000
1600
1200
800
400
0
0
5
10
15
20
25
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
R
D
S
(
O
N
)
,
O
n
-
R
e
s
i
s
t
a
n
c
e
(
O
h
m
s
)
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
GS
=10V
I
D
=30A
-100
-50
0
50
100
150
200
V
T
H
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250A
-50 -25 0 25 50 75 100 125 150
I
S
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4
0.6
0.8
1.0
10
1
10
0
10
2
1.4
1.2
V
GS
=0V
120
100
60
40
20
0
0
1
4
6
5
3
2
80
V
GS
=10,9V
V
GS
=5V
V
GS
=6V
V
GS
=7V
V
GS
=8V
80
60
40
20
0
0
2
4
6
100
8
T
J
=125 C
-55 C
25 C
CEP60N10/CEB60N10
4 - 117
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
10
-2
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
0
Single Pulse
0.01
10
-1
10
-2
10
3
10
4
10
2
10
1
10
0
10
-1
0.02
0.05
0.1
0.2
D=0.5
10
6
4
2
0
0
12
24
36
72
V
DS
=80V
I
D
=30A
48
60
8
10
2
10
1
10
0
10
3
10
3
10
2
10
1
10
0
Single Pulse
T
C
=25 C
T
J
=175 C
10
s
DC
100
s
R
DS(ON)
Limit
1ms
4
PDF 
ZIP