30
N-Channel Enhancement Mode Field Effect Transistor
Dec. 2002
FEATURES
30V , 12.5A , R
DS(ON)
=9.5m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
12.5
50
2.3
2.5
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
50
/W
C
R
DS(ON)
=14m
@V
GS
=4.5V.
CEM4410B
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
5
5-2
SO-8
1
a
a
a
a
CEM4410B
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1
A
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
= 0V
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 10A
7.5
m
V
GS
= 4.5V, I
D
=5A
11
14
m
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 10V
25
18
A
S
Forward Transconductance
FS
g
V
DS
= 15V, I
D
= 10A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=10V, V
GS
= 0V
f =1.0MH
Z
2237
P
F
1228
P
F
P
F
320
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GS
= 10V,
R
GEN
= 6
33
65
ns
ns
ns
ns
60
108
65
117
50
90
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 10A,
V
GS
=10V
57
68
nC
nC
nC
9
16
C
Fall Time
5-3
5
9.5
CEM4410B
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 2.3A
0.75
1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
,
Capacitance
(pF)
I
D
,
D
r
a
in
Current
(A)
I
D
,
D
r
a
in
Current
(A)
5-4
5
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
-55 C
25 C
50
40
30
20
10
0
1
2
3
4
Tj=125 C
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=10V
I
D
=10A
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
V
GS
=3V
V
GS
=10,8,6,5,4V
0
5
10
15
20
25
30
Ciss
Coss
Crss
3000
2500
2000
1500
1000
500
0
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
c
urrent
(A)
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
rain
Current
(A)
CEM4410B
5-5
5
V
GS
,
Gate
t
o
Source
Voltage
(V)
Figure 7. Transconductance Variation
with Drain Current
10
8
6
4
2
0
0
15
30
45
60
V
DS
=15V
I
D
=10A
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250 A
10
10
-2
10
10
1
0
-1
10
1
10
-2
10
0
10
-1
10
2
10
2
RDS(
ON
) L
im
it
DC
10
0ms
10ms
T
A
=25 C
Single Pulse
Tj=150 C
1ms
1s
20
15
10
5
25
0
0
5
10
15
20
V
DS
=15V
50
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
Transient
Thermal
Impedance
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
5-6
5
CEM4410B
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
10
2
10
1
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
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