CE
1N4448
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
MECHANICAL DATA
.
Case: MinMelf glass case(SOD- 80)
.
Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Units
Reverse voltage
V
R
75
Volts
Peak reverse voltage
V
RM
100
Volts
Average rectified current, Half wave rectification with
I
AV
150
1)
mA
Resistive load at T
A
=25 and F 50Hz
Surge forward current at t<1S and T
J
=25
I
FSM
500
mW
Power dissipation at T
A
=25
Ptot
500
1)
mW
Junction temperature
T
J
175
Storage temperature range
T
STG
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols
Min.
Typ.
Max.
Units
Forward voltage at I
F
=5mA
V
F
0.62
0.72
V
at IF=10mA
V
F
1
V
Leakage current at V
R
=20V
I
R
25
nA
at V
R
=75V
I
R
5
A
at V
R
=20V, T
J
=150
I
R
50
A
Junction capacitance at V
R
=V
F
=0V
C
J
4
pF
Reverse breakdown voltage tested with 100 A puse
V
(BR)R
100
V
Reverse recovery time from IF=10mA to IR=1mA,
4
V
R
=6V, R
L
=100
Thermal resistance junction to ambient
R
JA
350
1)
350
1)
Rectification efficience at f=100MHz,V
RF
=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
t
rr
ns
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
1N4448
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4448
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
1N4448
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FIG.5-RECTIFICATION EFFICIENCY
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
MEASUREMENT CIRCUIT
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
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