CE
LL4148
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4148
MECHANICAL DATA
Dimensions in inches and (millimeters)
.
Case: MinMelf glass case(SOD- 80)
.
Weight: Approx. 0.05gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Units
Reverse voltage
V
R
75
Volts
Peak reverse voltage
V
RM
100
Volts
Average rectified current, Half wave rectification with
I
AV
150
1)
mA
Resistive load at T
A
=25 and F 50Hz
Surge forward current at t<1S and T
J
=25
I
FSM
500 mA
Power dissipation at T
A
=25
Ptot 500
1)
mW
Junction temperature
T
J
175
Storage temperature range
T
STG
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols
Min.
Typ.
Max.
Units
Forward voltage
V
F
1
Volts
Leakage current at V
R
=20V
I
R
25
nA
at V
R
=75V
I
R
5
nA
at V
R
=20V, T
J
=150
I
R
50
nA
Junction capacitance at V
R
=V
F
=0V
C
J
4
pF
Voltage rise when switching ON tested with 50mA
2.5
Volts
pulse Tp=0.1 S, Rise time<30 S, f
p
=5 to 100KHz
Reverse recovery time from I
F
=10mA to I
R
=1mA,
t
rr
4
ns
V
R
=6V, R
L
=100
Thermal resistance junction to ambient
R
JA
350
1)
K/W
Rectification efficience at f=100MHz,V
RF
=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
V
fr
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
LL4148
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4148
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
LL4148
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
CIRCUIT
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
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