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Электронный компонент: IAD112N

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1
www.clare.com
IAD112N
DS-IAD112N-R2
The IAD112N Multifunction Telecom switch combines a
350V Form A relay and two optocouplers in a single pack-
age. The relay uses optically coupled MOSFET technolo-
gy to provide 1500V of input to output isolation. The
efficient MOSFET switch and photovoltaic die use Clare's
patented OptoMOS architecture. The optically coupled
input uses highly efficient GaAIAs infrared LEDs.
IAD112N's allow telecom circuit designers to combine
three discrete functions in a single component. The
IAD112N's small package uses less space than tradition-
al discrete component solutions.
Telecommunications
Telecom Switching
Tip/Ring Circuits
Modem Switching (Laptop, Notebook, Pocket Size)
Hookswitch
Dial Pulsing
Ground Start
Ringer Injection
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Medical Equipment-Patient/Equipment Isolation
Security
Aerospace
Industrial Controls
UL Recognized: File Number E76270
CSA Certified: File Number LR 43639-12
VDE Compatible
BSI Certified:
BS EN 60950:1992 (BS7002:1992)
Certificate #:7969
BS EN 41003:1993
Certificate #:7969
16 Pin Narrow SOIC Package
Three Functions in One Package
Bi-Directional Current Sensing
Bi-Directional Current Switching
3750V
RMS
Input/Output Isolation
FCC Compatible
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Tape & Reel Versions Available
Applications
Features
Description
Approvals
Integrated Telecom Circuits
Ordering Information
Part #
Description
IAD112N
16 Pin SOIC (Narrow) (50/Tube)
IAD112N
16 Pin SOIC (Narrow) (1000/Reel)
IAD112N
Units
Load Voltage
350
V
Load Current
100
mA
Max R
ON
35
Pin Configuration
Switching Characteristics of
Normally Closed (Form B) Devices
CONTROL
10ms
10%
90%
90%
+
+
T
ON
T
OFF
+
Switching Characteristics of
Normally Open (Form A) Devices
CONTROL
LOAD
10ms
10%
10%
90%
+
T
ON
T
OFF
+
+
www.clare.com
IAD112N
Rev. 2
Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.
Absolute Maximum Ratings (@ 25 C)
2
Parameter
Min
Typ
Max Units
Total Package Dissipation
-
-
1
1
W
Isolation Voltage
Input to Output
3750
-
-
V
RMS
Operational Temperature
-40
-
+85
C
Storage Temperature
-40
-
+125
C
Soldering Temperature
-
-
+220
C
(10 Seconds Max.)
1
Above 25 derate linerity 1.67mw/C
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Relay Portion
Output Characteristics @ 25C
Load Voltage (Peak)
I
L
= 1A
V
L
-
-
350
V
Load Current (Continuous)
-
I
L
-
-
100
mA
Peak Load Current
10ms
I
LPK
-
-
350
mA
On-Resistance
I
L
=100mA
R
ON
-
-
35
Off-State Leakage Current
V
L
=350V; T
J
=25C
I
LEAK
-
-
1
A
Switching Speeds
Turn-On
I
F
=5mA, V
L
=10V
T
ON
-
-
3
ms
Turn-Off
I
F
=5mA, V
L
=10V
T
OFF
-
-
3
ms
Output Capacitance
V
L
=50V, f=1MHz
-
-
25
-
pF
Relay Portion
Input Characteristics @ 25C
Input Control Current
I
L
=100mA
I
F
5
-
50
mA
Input Dropout Current
I
L
=1mA
I
F
0.4
-
-
mA
Input Voltage Drop
I
F
=5mA
V
F
0.9
1.2
1.4
V
Reverse Input Voltage
-
V
R
-
-
5
V
Reverse Input Current
V
R
=5V
I
R
-
-
10
A
Detector Portion
Output Characteristics @ 25C
Phototransistor Blocking Voltage
I
C
=10A
BV
CEO
20
50
-
V
Phototransistor Dark Current
VCE=5V, I
F
=0mA
I
CEO
-
50
500
nA
Saturation Voltage
I
C
=2mA, I
F
=16mA
V
SAT
-
0.3
0.5
V
Current Transfer Ratio
I
F
=6mA, V
CE
=0.5V
C
TR
33
-
-
%
Detector Portion
Input Characteristics @ 25C
Input Control Current
I
C
=2mA,VCE=0.5V I
F
6
2
-
mA
Input Voltage Drop
IF=5mA
I
CEO
0.9
1.2
1.4
V
Input Current
I
C
=1A, VCE=5V
-
5
25
-
A
(Detector must be off)
Input to Output Capacitance
V
L
=50V, f=1MHz
C
I/O
-
3
-
pF
Input to Output Isolation
-
V
I/O
3750
-
-
V
RMS
IAD112N
3
Rev. 2
Dimensions
mm
(inches)
Mechanical Dimensions
.20
.025
(.008
.001)
1.27 TYP.
(.050 TYP.)
2.18 MAX.
(.086)
1.01
.025
(.040
.001)
3.81
.05
(.150
.002)
6.09
.10
(.240
.004)
.38 x 45
(.015 x 45
)
.38 TYP.
(.015 TYP.)
9.93
.12
(.391
.005)
16 Pin SOIC Narrow ("N" Suffix)
PC Board Pattern
(Top View)
1.270
(0.050)
5.080
.127
(.200
.005)
1.193
(.047)
.787
(.031)
7.49
(.295)
2.00
(.079)
12.09
(.476)
1.75
(.069)
3.99
(.157)
1.50
(.059)
6.73
(.265)
.41
(.016)
2.30
(.091)
2.70
(.106)
Top Cover
Tape
2.01
(.079)
11.99
(.472)
User Direction of Feed
.05R TYP.
16.00
(.630)
10.30
(.406)
Embossment
Embossed Carrier
Top Cover
Tape Thickness
.10 MAX.
(.004)
6.80
(.268)
6.50
(.256)
3.00
(.118)
1.55
.102
(.061
.004)
330.2 DIA.
(13.00)
Tape and Reel Packaging for 8 and 16 Pin Narrow SOIC Package
1
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Specification: DS-IAD112N-R2
Copyright 2000, Clare, Inc.
All rights reserved. Printed in USA.
3/23/01
Clare cannot assume responsibility for use of any circuitry other
than circuitry entirely embodied in this Clare product. No circuit
patent licenses nor indemnity are expressed or implied. Clare
reserves the right to change the specification and circuitry, with-
out notice at any time. The products described in this document
are not intended for use in medical implantation or other direct life
support applications where malfunction may result in direct phys-
ical harm, injury or death to a person.