Voltage: 75 Volts
Current: 200mA
BAS16
Features
Fast Switching Speed
For General Purpose Switching
Applications
High Conductance
Mechanical data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
method 208
Approx. Weight: 0.008 gram
Surface Mount Package Ideally Suited for
Automatic Insertion
Surface Mount Switching Diode
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COMCHIP
COMCHIP
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.056 (
1
.4
0)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
1
ANODE
3
CATHODE
1
2
3
MDS0212004A
Page 1
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COMCHIP
COMCHIP
MDS0212004A
Page 2
Surface Mount Switching Diode
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150
C)
(VR = 25 Vdc, TJ = 150
C)
IR
--
--
--
1.0
50
30
Adc
Reverse Breakdown Voltage
(IBR = 100
Adc)
V(BR)
75
--
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
--
--
--
--
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
--
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
--
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50
)
trr
--
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc, RL = 500
)
QS
--
45
pC
1.FR5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
www.comchip.com.tw
COMCHIP
COMCHIP
Surface Mount Switching Diode
MDS0212004A
Page 3
Rating and Characteristic Curves (BAS16)
100
0.2
0.4
VF, F
orward Voltage (V)
0.6
0.8
1.0
1.2
10
1.0
0.1
TA = 85
C
10
0
VR, R
everse Voltage (V)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
VR, R
everse Voltage (V)
0.64
0.60
0.56
0.52
C
D
, D
iode Capacitance
(pF)
2
4
6
8
I F
, F
orward Current (mA)
(mA)
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
TA = 40
C
TA = 25
C
TA = 150
C
TA = 125
C
TA = 85
C
TA = 55
C
TA = 25
C
I R
, R
everse Current
(
A)
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2.0 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
Output
Pulse
Generator
50
I
nput
Sampling
Oscilloscopes
tr
tp
t
10%
90%
IF
IR
trr
t
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
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