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COMCHIP
Page 1
BTC4505N3
High Voltage Transistor (NPN)
Features
High breakdown voltage. (BVceo =400V)
Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA
C
Parameter
Symbol
COLLECTOR
3
1
BASE
2
EMITTER
Limit
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
300
mA
Power Dissipation
Pd
0.225
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Unit
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.037(0.95) .037(0.95)
.037(0.95) .037(0.95)
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
Top View
Top View
Top View
.10
3
(2.6)
.10
3
(2.6)
.10
3
(2.6)
.10
3
(2.6)
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.0
20
(0.
5
)
.056 (
1
.4
0)
.056 (
1
.4
0)
.056 (
1
.4
0)
.056 (
1
.4
0)
MDS0405003A
www.comchiptech.com
COMCHIP
Page 2
MDS0405003A
High Voltage Transistor (NPN)
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
400 -
- V
I
C
=50A, I
E
=0
BV
CEO
400 -
- V
I
C
=1mA, I
B
=0
BV
EBO
6 - - V
I
E
=50A, I
C
=0
I
CBO
- -
10
A
V
CB
=400V, I
E
=0
I
CER
- -
20
nA
V
CE
=300V, R
EB
=4k
I
EBO
- -
10
A
V
EB
=6V,I
C
=0
*V
CE(sat)
-
0.1
0.5
V
I
C
=10mA, I
B
=1mA
*V
BE(sat)
- 1.5 V
I
C
=10mA, I
B
=1mA
h
FE
52 - 270 -
V
CE
=10V, I
C
=10mA
f
T
-
20
-
MHz
V
CE
=10V, I
C
=10mA, f=10MHz
Cob - 7 - pF
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle2%
Classification Of h
FE
Rank K
P
Q
Range 52~120 82~180 120~270
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