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Электронный компонент: CDBD835

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Reverse Voltage: 35 Volts
Forward Current: 8.0 Amp
CDBD835L
Features
Lead formed for surface mount
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Low Switching Noise
Low forward voltage drop
Mechanical data
Case: TO-252AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Mounting position: Any
Approx. Weight: 0.295 gram
SMD Schottky Barrier Rectifier
SMD Schottky Barrier Rectifier
www.comchip.com.tw
COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0211012A
Page 1
Parameter
Max.Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Average Rectifier Forward Current (Note 1)
Peak Repetitive Foward Current (at Rated V
R
,
Square Wave, 20KHz, Tc=80 C)
Max. Instantaneous Forward Current at 8.0 A (Note 2)
Max. DC Reverse Current at Rated DC Blocking
Voltage Ta=25
Ta=100
Max. Thermal Resistance (Note 3)
Operating Junction temperature

Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
I
F(AV)
I
FRM
V
F
I
R

R
JA
R
JC
T j
T
STG
Unit
V
V
V
A
A
A
V
A
C/W
Note 1. Total deviceRated Vp at Tc=100 C
2. Pulse width = 300uS, duty cycle less than 2%.
3. Thermal resistance from junction to ambient and junction to case mounted on minimum pad size recommended
CDBD835
35
35
24.5
75
8.0
0.5
- 6 5 t o + 1 2 5
80
6.0
1.4
- 6 5 t o + 1 5 0
35
C
C
A 5.40 5.60
B 6.30 6.70
C 2.20 2.40
D 5.20 5.50
E 8.00 10.00
F 6.60 7.00
G 2.40 3.00
H 0.90 1.50
I 0.45 0.55
J 0.45 0.60
K 0.90 1.50
L 0.70 0.90
M 0.50 0.70
N 0.60 0.90
P 2.70 3.10
Q 5.00 5.40
S 4.80 5.20
T 2.30
V 1.20 1.40
X 0.80 1.20
DIM Min. Max.
Unit: Millmeters
TO-252AA (D-PAK)
2
16
C
C
Rating and Characteristic Curves (CDBD835L)
Fig. 2 - Forward Characteristics
Forward Voltage (Volts)
F
o
r
w
a
r
d

C
u
r
r
e
n
t

(

A

)
Fig. 4 - Current Derating Curve
0
4.5
9.0
160
20
40
60
80
100
120 140
A
v
e
r
a
g
e

F
o
r
w
a
r
d

C
u
r
r
e
n
t

(

A

)
www.comchip.com.tw
COMCHIP
COMCHIP
0 0.1 0.2 0.3 0.4 0.5 0.6
1.0 10 50
200
MDS0211012A
Page 2
Fig. 3 - Junction Capacitance
J
u
n
c
t
i
o
n

C
a
p
a
c
i
t
a
n
c
e


(
p
F
)
0
400
600
2000
SMD Schottky Barrier Rectifier
SMD Schottky Barrier Rectifier
1.5
3.0
7.5
6.0
1000
Reverse Voltage (V)
1
10
0.1
0.01
Ambient Temperature ( C)
Tj=25 C
Tj=125 C
R
e
v
e
r
s
e

C
u
r
r
e
n
t

(
m
A

)
Fig.1 - Reverse Characteristics
0 5 10 15 20 25 30 35
1000
100
10
1
0.1
0.01
0.001
Reverse Voltage (Volts)
Tj=25 C
Tj=125 C
Tj=100 C
Tj=25 C