Voltage:
100 Volts
Current
:
200mA
CDST 914
CDST 914
Surface Mount Switching Diode
www.comchip.com.tw
COMCHIP
COMCHIP
Features
Fast Switching Speed
Surface Mount Package Ideally Suite4d for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.056 (
1
.4
0)
Mechanical Data
Case: SOT -23, Plastic
Terminals : Solderable per NIL-STD -202,
Method 208
Approx. Weight: 0.008 gram
Rating
Symbol
Value
Units
Continuous Reverse Voltage
V
R
100
V
DC
Peak Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM
(surge)
500
mAdc
Characteristic
Symbol
Max
Units
Total Device Dissipation FR 5 Board(1) T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation Alumina Substrate,(2) T
A
= 25C
300
mW
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
Characteristic (OFF CHARACTERISTICS)
Symbol
Min
Max
Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc )
V
(BR)
100
-
Vdc
Reverse Voltage Leakage Current
V
R
= 20 Vdc
-
25
nAdc
V
R
= 75 Vdc
-
50
uAdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz))
C
T
4.0
pF
Forward Voltage I
F
= 10 mAdc
V
F
-
1.0
Vdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc)
Trr
4.0
nS
1.FR5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
P
D
Electrical Characterics (TA = 25C unless otherwise noted)
I
R
Maximum Ratings
Thermal Characteristics
P
D
MDS0210002A
Page 1
1
ANODE
3
CATHODE
3
2
1
Surface Mount Switching Diode
www.comchip.com.tw
COMCHIP
COMCHIP
R A T I N G A N D C H A R A C T E R I S T I C C U R V E S ( C D S T 9 1 4 )
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2.0 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
Output
Pulse
Generator
50
I
nput
Sampling
Oscilloscopes
tr
tp
t
10%
90%
IF
IR
trr
t
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
VF,
Forward Voltage (V)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, R
everse Voltage (V
)
10
0
1.0
0.1
0.001
0.01
10
20
30
40
50
I
1.0
1.2
0.2
0.4
0.6
0.8
Figure 4. Capacitance
VR,
Reverse Voltage (V)
0
C
0.68
0.64
0.60
0.52
0.56
2.0
4.0
6.0
8.0
, F
orward
Current
(mA)
F
TA = 85
C
TA = 40
C
TA = 25
C
, D
iode Capacitance
(pF)
D
TA = 25
C
TA = 55
C
TA = 85
C
TA = 150
C
TA = 125
C
I R
, R
everse Current
(
A)
MDS0210002A
Page 2
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