G
SiC
Technology
MegaBright
LEDs
Cxxx-MB290-S0100
Features Applications
MegaBright Performance
9.0mW min (395nm) Ultraviolet
10.0mW min (405nm) Ultraviolet
Single Wire Bond Structure
Class I ESD Rating
White LEDs
Counterfeit Bill Detection
Description
Cree's MB
series of MegaBright LEDs combine highly efficient InGaN materials with Cree's
proprietary GSiC substrate to deliver superior price performance for high intensity UltraViolet LEDs.
These LED chips have a geometrically enhanced vertical chip structure to maximize light extraction
efficiency, and require only a single wire bond connection. Cree's MB series chips are tested for
conformity to optical and electrical specifications and the ability to withstand 400V ESD. These LEDs
are useful in a broad range of applications such as white light applications and counterfeit bill detection,
yet can also be used in high volume applications. Cree's MB series chips are compatible with most radial
and SMT LED assembly processes.
Cxxx-MB290-S0100 Chip Diagram
Top
side View
GSiC LED Chip
300 x 300 m
Mesa (junction)
240 x 240 m
Gold Bond Pad
114 m Diameter
Anode (+)
h = 250 m
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
Bottom View
Die Cross Section
CPR3BE Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
Cxxx-MB290-S0100
Maximum Ratings at T
A
= 25C
Notes 1&3
Cxxx-MB290-S0100
DC Forward Current
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-20C to +80C
Storage Temperature Range
-30C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
400
V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
1
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 20mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Peak Wavelength
(
p,
nm)
Optical Rise Time
(
, ns)
Typ
Max
Max
Min
Typ
Max
Typ
C395-MB290-S0100 3.7 4.0
10
390 395 400
30
C400-MB290-S0100 3.7 4.0
10
390 400 410
30
C405-MB290-S0100 3.7 4.0
10
400 405 410
30
Mechanical Specifications
Note 4
Cxxx-MB290-S0100
Description Dimension
Tolerance
P-N Junction Area (m)
240 x 240
25
Top Area (m)
300 x 300
25
Bottom Area (m)
200 x 200
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
114
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width (m)
19.8
-5, +10
Notes:
1)
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS1600 epoxy for characterization.
Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are
not limited by the GSiC
die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of
the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature
must not exceed 325C (< 5 seconds).
2)
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures
are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3)
All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller
in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All
measurements were made using lamps in T-1 3/4 packages with Hysol OS1600 epoxy.
4)
All Products conform to the listed mechanical specifications within the tolerances shown.
5)
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80
m.
CPR3BE Rev. -
Cree, Inc. 2003 All Rights Reserved.
CPR3BE Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
Cxxx-MB290-S0100
Standard Bins for UltraViolet MB290:
LED chips are sorted to the radiant flux and peak wavelength bins. A sorted die sheet contains die from only one bin.
Sorted die kit (Cxxx-MB290-S0100) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit.
11.0mW
12.0mW
9.0mW
10.0mW
C400MB290-S0100 Sorted Die Kit contains all bins shown above (390-410nm).
C395MB290-S0100
390
395
C395MB290-0103
C395MB290-0101
C395MB290-0104
C395MB290-0102
C405MB290-S0100
400
405
410
C405MB290-0103
C405MB290-0104
C405MB290-0101
C405MB290-0102
400
Ra
dia
n
t Flux
Peak Wavelength (nm)
Peak Wavelength (nm)
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