G
SiC
Technology
XBright
TM
LEDs
Cxxx-XB290-S0100-A
Features Applications
XBright
TM
Performance
12.0 mW min Blue (460nm and 470nm)
7.0 mW min Green (527nm)
Single Wire Bond Structure
Class II ESD Rating
Outdoor LED Video Displays
Automotive Dashboard Lighting
White LEDs
Backlighting
Description
Cree's XB
TM
series of XBright
TM
LEDs are the next generation of solid state LED emitters that combine highly
efficient InGaN materials with Cree's proprietary GSiC substrate to deliver superior price performance for
high intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light
extraction efficiency, and require only a single wire bond connection. Cree's XB series chips are tested for
conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are
useful in a broad range of applications such as outdoor full motion LED video signs, automotive lighting and
white LEDs, yet can also be used in high volume applications such as LCD backlighting.
Cxxx-XB290-S0100-A Chip Diagram
Top View
G
SiC LED
300 x 300 m
Top Area
200 x 200 m
Bond Pad
96 m Diameter
Cathode (-)
h = 250 m
Backside
Metallization
210 x 210 m
Anode (+)
InGaN
SiC Substrate
Bottom View
Die Cross Section
Junction Area
248 x 248 m
CPR3BC Rev. D
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
XBright
TM
LEDs
Cxxx-XB290-S0100-A
Maximum Ratings at T
A
= 25C
Notes 1&3
Cxxx-XB290-S0100-A
DC Forward Current
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-40C to +100C
Storage Temperature Range
-40C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 20mA
Note 3
Sorted Kit
Part number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Typ
Max
Max
C460-XB290-S0100-A
3.6
4.0
10
C470-XB290-S0100-A
3.6
4.0
10
C527XB290-S0100-A
3.7
4.0
10
Mechanical Specifications
Cxxx-XB290-S0100-A
Description Dimension
Tolerance
P-N Junction Area (m)
248 x 248
25
Top Area (m)
200 x 200
25
Bottom Area (Substrate) (m)
300 x 300
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
96
-5, +15
Au Bond Pad Thickness (m)
1.2
0.5
Au/Sn Back Contact Metal Area (m)
210 x 210
25
Au/Sn Back Contact Metal Thickness (m)
1.7
0.3
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used
by Seller. The forward currents (DC and Peak) are not limited by the G SiC die but by the effect of the LED junction
temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature
should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C
(< 5 seconds). See Cree XBright Applications Note for more assembly process information.
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when
assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical
values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no
assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages
with Hysol OS4000 epoxy. Optical characteristics were measured in an integrating sphere. Illuminance E.
CPR3BC Rev. D
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
XBright
TM
LEDs
Cxxx-XB290-S0100-A
Notes (continued):
4)
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282C. See XBright
Applications Note for detailed packaging recommendations.
5)
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the
side of the chip. See Cree XBright Applications Note for more information.
Standard Bins for XB290:
LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from
only one bin. Sorted die kit (Cxxx-XB290-S0100-A) orders may be filled with any or all bins (Cxxx-XB290-
01xx-A) contained in the kit.
15.0mW
12.0mW
15.0mW
12.0mW
Radiant Flux
Radiant Flux
C460XB290-0105-A
C460XB290-0101-A
C460XB290-0106-A
C460XB290-0107-A
C460XB290-0108-A
C470XB290-0104-A
C470XB290-0105-A
C470XB290-0106-A
C470XB290-0107-A
C470XB290-0108-A
C460XB290-S0100-A
C470XB290-S0100-A
455nm
457.5nm
460nm
462.5nm
465nm
C460XB290-0102-A
C460XB290-0103-A
C460XB290-0104-A
475nm
Dominant Wavelength
Dominant Wavelength
465nm
467.5nm
470nm
472.5nm
C470XB290-0101-A
C470XB290-0102-A
C470XB290-0103-A
C527XB290-0104-A
C527XB290-0105-A
C527XB290-0106-A
8.0mW
C527XB290-0101-A
C527XB290-0102-A
C527XB290-0103-A
7.0mW
520nm
525nm
530nm
535nm
Radiant Flux
C527XB290-S0100-A
Dominant Wavelength
CPR3BC Rev. D
Cree, Inc. 2003 All Rights Reserved.
CPR3BC Rev. D
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
XBright
TM
LEDs
Cxxx-XB290-S0100-A
Characteristic Curves:
These are representative measurements for blue XBright products. Actual curves will vary slightly for the various radiant flux and
dominant wavelength bins.
Wavelength Shift vs Forward Current - All Products
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
5
10
15
20
25
30
If (mA)
S
h
ift (n
m)
527nm
470nm
Forward Current vs Forward Voltage - All Products
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vf (V)
If (m
A)
Relative Intensity vs Forward Current - All Products
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0
5
10
15
20
25
30
If (mA)
%
Relative Intensity vs Wavelength - All Products
0%
20%
40%
60%
80%
100%
Wavelength (nm)
Relative Intensity (
%
)
500
400
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