CPR3AG Rev. H
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
UltraBrightTM LEDs
CxxxUB29x-S0100
Features Applications
UltraBrightTM LED Performance
3.8mW min (460nm) Deep Blue
3.4mW min (470nm) Blue
2.5mW min (505nm) Signal Green
1.7mW min (527nm) Green
Sorted to Wavelength and Power Bins
Single Wire Bond Structure
Class II ESD Rating
LED Video Displays
White LEDs
Automotive Dashboard Lighting
Cellular Phone Backlighting
Audio Product Display Lighting
Description
Cree's UBTM series of UltraBrightTM LEDs combine highly efficient InGaN materials with Cree's
proprietary G
SiC substrate to deliver excellent price performance for high intensity blue and green
LEDs. UltraBright LED chips are available in a geometrically enhanced vertical structure or a straight-
wall design for use in reflector-less applications such as ChipLEDs. Both require only a single wire
bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant
flux bins. Cree's UB series chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as
outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also
be used in high volume applications such as LCD backlighting. Cree's UB series chips are compatible
with most radial and SMT LED assembly processes.
CxxxUB29x-S0100 Chip Diagram
Topside View
GSiC LED Chip
300 x 300 m (UB290)
275 x 275 m (UB291)
Mesa (junction)
240 x 240 m
Gold Bond Pad
114 m Diameter
Cathode (-)
Anode (+)
h = 250 m
Backside
Metallization
InGaN
SiC Substrate
Die Cross Section (UB290)
Straight-wall design (UB291)
SiC Substrate
InGaN
CPR3AG Rev. H
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
UltraBrightTM LEDs
CxxxUB29x-S0100
Maximum Ratings at T
A
= 25C
Notes 1&3
CxxxUB29x-S0100
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-40C to +100C
Storage Temperature Range
-40C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000
V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 20mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Peak Wavelength
(
p,
nm)
Full Width Half Max
(
D,
nm)
Optical Rise Time
(
, ns)
Min
Typ
Max
Max Typ Typ Typ
C460UB29x-S0100
3.0 3.5 3.9
10
458
26
30
C470UB29x-S0100
3.0 3.5 3.9
10
468
26
30
C505UB29x-S0100
3.0 3.5 3.9
10
502
30
30
C527UB29x-S0100
3.0 3.5 3.9
10
518
36
30
Mechanical Specifications
Note 4
CxxxUB29x-S0100
Description Dimension
Tolerance
P-N Junction Area (m)
240 x 240
25
UB290 Top Area (m)
300 x 300
25
UB290 Bottom Area (m)
200 x 200
25
UB291 Top Area (m)
275 x 275
25
UB291 Bottom Area (m)
300 x 300
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
114
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width
20
-5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for
characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED
junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds).
2)
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD
classification of Class II is based on sample testing according to MIL-STD 883E.
3)
All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
4)
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80
m.
5)
Specifications are subject to change without notice.
CPR3AG Rev. H
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
UltraBrightTM LEDs
CxxxUB29x-S0100
Standard Bins for CxxxUB290-S0100:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxUB290-S0100) orders may be filled with any or all bins (CxxxUB290-010x) contained in the
kit.
8.0mW
6.0mW
3.8mW
7.5mW
5.5mW
3.4mW
6.0mW
4.0mW
2.5mW
5.0mW
3.5mW
1.7mW
Dominant Wavelength
C527UB290-S0100
505UB290-0103
505UB290-0104
505UB290-0101
505UB290-0102
527UB290-0104
527UB290-0105
510nm
527UB290-0106
Radiant F
l
ux
Radiant F
l
ux
Radiant F
l
ux
Dominant Wavelength
Dominant Wavelength
527UB290-0101
527UB290-0102
C505UB290-S0100
470UB290-0103
Dominant Wavelength
Radiant F
l
ux
465nm
455nm
460nm
C460UB290-S0100
460UB290-0103
460UB290-0104
460UB290-0101
460UB290-0102
470UB290-0101
470UB290-0104
470UB290-0102
C470UB290-S0100
465nm
520nm
525nm
530nm
500nm
505nm
527UB290-0103
535nm
470nm
475nm
CPR3AG Rev. H
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
UltraBrightTM LEDs
CxxxUB29x-S0100
Standard Bins for CxxxUB291-S0100:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxUB291-S0100) orders may be filled with any or all bins (CxxxUB291-010x) contained in the
kit.
11.0mW
460UB291-0105
460UB291-0106
8.0mW
460UB291-0103
460UB291-0104
6.0mW
460UB291-0101
460UB291-0102
3.8mW
10.0mW
470UB291-0107
470UB291-0108
7.5mW
470UB291-0105
470UB291-0106
5.5mW
470UB291-0101
470UB291-0103
3.4mW
6.0mW
505UB291-0103
505UB291-0104
4.0mW
505UB291-0101
505UB291-0102
2.5mW
5.0mW
527UB291-0104
527UB291-0105
527UB291-0106
3.5mW
527UB291-0101
527UB291-0102
527UB291-0103
1.7mW
535nm
470nm
475nm
510nm
C505UB291-S0100
Dominant Wavelength
Radiant F
l
ux
Radiant F
l
ux
C527UB291-S0100
520nm
525nm
530nm
500nm
505nm
Dominant Wavelength
Radiant F
l
ux
Radiant F
l
ux
C470UB291-S0100
465nm
455nm
Dominant Wavelength
460nm
C460UB291-S0100
Dominant Wavelength
465nm
CPR3AG Rev. H
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
UltraBrightTM LEDs
CxxxUB29x-S0100
Characteristic Curves
Relative Intensity vs Forward Current - All Products
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0
5
10
15
20
25
30
If (mA)
%
Forward Current vs Forward Voltage - All Products
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vf (V)
If (mA
)
Wavelength Shift vs Forward Current - All Products
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
5
10
15
20
25
30
If (mA)
S
h
i
ft (nm)
527nm
505nm
470nm
Relative Intensity vs Wavelength - All Products
0%
20%
40%
60%
80%
100%
Wavelength (nm)
Re
la
tiv
e
Inte
ns
ity
(%)
500
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