Rev 2.
UGF19030
UGF19030
30W, 1.9 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a
minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
ALL GOLD metal system for highest reliability
Industry standard package
Suggested alternative to the MRF19030
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Application Specific Performance, 1.99 GHz
GSM:
25 Watts
12 dB
EDGE:
13 Watts
12 dB
IS95 CDMA:
3.5 Watts
12 dB
CDMA2000:
TBD Watts
12 dB
Package Type 440162
PN: UGF19030F
Package Type 440161
PN: UGF19030P
Typical CDMA Performance (IS-97)
Average Load Power 4.5 W
PAE 18%
Power Gain 12 dB
ACPR
-45dBc @ 885kHz (30kHz BW)
-55dBc @ 1.25MHz (12.5kHz BW)
-55dBc @ 2.25MHz (1MHz BW)
Rev 2.
UGF19030
UGF19030
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
V
DSS
65 Volts
Gate to Source Voltage
V
GSS
+15 to .5
Volts
Total Device Dissipation @ Tcase = 60
o
C
Derate above 60
o
C
P
D
32
0.24
Watts
W/
o
C
Storage Temperature Range
T
stg
-65 to
+150
o
C
Maximum Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
2.0
o
C/W
Electrical DC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
=26V, V
GS
=0)
I
DSS
- -
1.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
=10V, I
D
=1mA)
V
GS(th)
-
3.5
-
Volts
Gate Quiescent Voltage
(V
DS
=26 V, I
D
=300mA)
V
GS(Q)
3.0
4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(on)
- .3
-
Volts
Forward Transconductance
(V
DS
=10V, I
D
=5A)
Gm - -
-
S
AC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
ISS
-
TBD
-
pF
Output capacitance *
(V
DS
= 26V, V
GS
=0V, f = 1MHz)
C
OSS
-
335
-
pF
Feedback capacitance *
(V
DS
=26V, V
GS
=0V, f = 1MHz)
C
RSS
-
1.9
-
pF
* Part is internally matched on input and output.
Rev 2.
UGF19030
UGF19030
RF and Functional Tests
(In Cree Microwave Broadband Fixture, Tc=25
C unless otherwise specified
)
Rating Symbol
Min
Typ
Max
Unit
CW Small Signal Gain, Pout=0.1W
V
DD
=26V, I
DQ
=300mA
G
L
-
12
-
dB
CW Power Gain, P
out
= 30 W
V
DD
=26V, I
DQ
=300mA
G
P
-
11
-
dB
CW Drain Efficiency, P
out
= 30 W,
f=1960 MHz, V
DD
=26V, I
DQ
=300mA,
D
- 43
-
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=26V, I
DQ
=300mA, P
out
= 30 W PEP
f
1
=1960 MHz and f
2
=1960.1 MHz
G
TT
-
12
-
dB
Two-Tone Intermodulation Distortion
V
DD
=26V, I
DQ
=300mA, P
out
= 30 W PEP
f
1
=1960 MHz and f
2
=1960.1 MHz
I
MD
-
-27
-
dBc
Two-Tone Drain Efficiency
V
DD
=26V, I
DQ
=300mA, P
out
= 30 W PEP
f
1
=1960 MHz and f
2
=1960.1 MHz
D2
- 35
-
%
Input Return Loss
V
DD
=26V, P
out
= 30 W PEP, I
DQ
=300mA
f
1
=1930 MHz and 1990 MHz, Tone Spacing =
100kHz
IRL -
10
-
dB
Load Mismatch Tolerance
V
DS
=26V, I
DQ
= 300 mA, Pout=30W, f=1990 MHz
VSWR 10:1 - -
Note: This transistor has been designed to work in the Motorola MRF19030 test fixture. Performance
has been verified within that fixture.
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
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