UGF21060 Rev. 1
UGF21060
60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170
MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
AB operation for PCN-PCS / Cellular radio applications and WLL applications.
Internally matched for repeatable manufacturing.
ALL GOLD metal system for highest reliability.
Suggested alternative to the MRF21060/MRF21060S.
Integrated ESD protection.
High gain, high efficiency and high linearity.
Industry standard package.
Maximum gain and insertion phase flatness.
Capable of handling 10:1 VSWR, @ 28 Vdc, 2110 MHz,
60W (CW) Output Power.
Excellent thermal stability.
Package Type 440171
PN: UGF21060F
Typical W-CDMA Performance
f1 = 2135MHz, f2 = 2145MHz
Average Output Power = 13.4 W
Efficiency = 23%
Power Gain = 13.1 dB
IM3 = -31.4 dBc (3.84 MHz BW @ f1-10MHz and f2+10MHz)
ACPR = -39dBc (3.84 MHz BW @ f1-5MHz and f2+5MHz)
V
DD
= 28V
I
DQ
= 700mA
Peak/Avg. = 10.5dB @ 0.01% Probability on CCDF
Package Type 440133
PN: UGF21060P
Typical EDGE Performance (GSM with EDGE ACP)
F = 2140MHz
V
DD
= 28V
I
DQ
= 700mA
Average Output Power = 25 W
Efficiency = 30%
Power Gain = 13.2 dB
ACPR1 = 67.1 dBc (30kHz BW offset
400kHz
normalized
to total power in a 30kHz BW).
ACPR2 = 76.1 dBc (30kHz BW offset
600kHz
normalized to
power in a 30kHz BW).
UGF21060 Rev. 1
UGF21060
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage
V
DSS
65 Volts
Gate to Source Voltage
V
GSS
+15
/-0.5 Volts
Total Device Dissipation @ Tcase = 25
o
C
Derate above 25
o
C
P
D
145.8
0.83
Watts
W/
o
C
Storage Temperature Range
T
STG
-60 to +150
o
C
Maximum JunctionTemperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal Resistance, Junction to Case, is a maximum of
jc
1.2
o
C/W
Electrical DC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0V
DC
, I
D
=5mA)
BV
DSS
65 73
-
V
DC
Drain to Source Leakage Current
(V
DS
=28V
DC
, V
GS
=0 V
DC
)
I
DSS
- -
0.5
A
Gate to Source Leakage Current, Forward
(V
GS
=15V
DC
, V
DS
=0 V
DC
)
I
GSSF
- -
1.0
A
DC
Threshold Voltage
(V
DS
= V
GS
, I
D
=20mA)
V
GS(th)
2.7 3.6
5.0
V
DC
Drain to Source Leakage Current
(V
DS
=65V
DC
, V
GS
=0 V
DC
)
V
DSS2
- -
60
A
DC
Drain to Source On Voltage
(V
GS
=10 V
DC
, I
D
=1A
V
DS(on)
- -
0.18
V
DC
Forward Transconductance
(V
DS
=10 V
DC
, I
D
=1.0A)
Gm 1.0 -
-
S
Notes (unless otherwise specified):
1. All tests are at 25
C.
AC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
ISS
- 165 -
pF
Output capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
OSS
- TBD -
pF
Feedback capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
RSS
- 1.95 -
pF
* Part is input matched.
UGF21060 Rev. 1
UGF21060
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Power Gain, P
OUT
=60W, CW 47.8 dBm
V
DD
=28V, I
DQ
=500mA
f= 2110-2170 MHz
G
P
11 12
15
dB
Power Gain, P
OUT
=15W, CW 41.8 dBm
V
DD
=28V, I
DQ
=500mA
f= 2110-2170 MHz
G
L
12 13
16
dB
Drain Current, P
OUT
=60W, CW 47.8dBm
V
DD
=28V, I
DQ
=500mA
f= 2110-2170 MHz
I
D
-
-
5.2
A
Two-Tone Drain Efficiency
V
DD
=28V, I
DQ
=500mA, P
OUT
= 60W PEP
f =2110MHz and 2170MHz, Tone Spacing =100kHz
D
31 35.5 -
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=28V, I
DQ
=500mA, P
OUT
= 60W PEP
f =2110MHz and 2170MHz, Tone Spacing =100kHz
G
TT
11.2 13.3 - dB
Two-Tone Third Order Intermodulation Distortion
V
DD
=28V, I
DQ
=500mA, P
OUT
= 60W PEP
f =2110MHz and 2170MHz, Tone Spacing =100kHz
IMD3
-
-32 -28
dBc
Two Tone Drain Current
P
OUT
= 60W PEP, V
DD
=28V, I
DQ
=500mA,
f
1
=2170 MHz and f
2
=2170.1 MHz
I
MD3
-
2.97
3.45
A
Input Return Loss
V
DD
=28V, I
DQ
=500mA, P
OUT
= 60W PEP
f =2110MHz and 2170MHz, Tone Spacing =100kHz
IRL
- -15
-10
dB
Load Mismatch Tolerance*
V
DD
=28V, I
DQ
=500mA, P
OUT
=60W (CW)
f=2110MHz @ all phase angles
VSWR 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
UGF21060 Rev. 1
Power Gain, Efficiency vs Output Power
0
2
4
6
8
10
12
14
5
15
25
35
45
55
65
75
Output Power (Watts) CW Avg
Pin (Watts), Power Gain (dB)
0
5
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
PIn(w)
Gp(dB)
EFF(%)
V
DD
=28V
I
DQ
=700mA
Freq=2140MHz
UGF21060
Two Carriers CDMA
IM3, Power Gain, Drain Efficiency, ACPR vs Output Power
0
5
10
15
20
25
30
0
5
10
15
20
Pout,Output Power (Watts) Avg, CDMA
Drain Efficiency (%),
Gps, P
o
wer Gain (dB)
-60
-50
-40
-30
-20
-10
0
ACPR (dBc), IM3 (dBc)
Gp(dB)
EFF(%, Avg)
UpIM3(dBc)
UpACPR(dBc)
V
DD
=28V, I
DQ
=700mA
Freq=2140MHz
1.23MHz Channel BW
2.5MHz Space Heading
UGF21060 Rev. 1
Efficiency, ACPR1, ACPR2 vs Output Power - EDGE
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Pout, Output Power (Watts) Avg
Drain Efficiency (%), Gp (dB)
-100
-90
-80
-70
-60
-50
-40
-30
ACPR1 (400kHz), ACPR2 (600kHz)
Gp(dB)
EFF(%, Avg)
ACP1(dB)
ACP2(dB)
V
DD
=28V, I
DQ
=700mA
Freq=2140 MHz
30kHz BW offset
UGF21060
Two Carriers W-CDMA
IM3, Power Gain, Drain Efficiency, ACPR vs Output Power
5
10
15
20
25
30
0
5
10
15
Pout, Output Power (Watts) Avg, Wide-Band CDMA
Dr
ain Efficiency (%),
Gps, Power Gain (dB)
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
ACPR (dBc), IM3 (dBc)
Gp(dB)
EFF(%, Avg)
UpACPR(dBc)
UpIM3(dBc)
V
DD
=28V, I
DQ
=700mA
Freq=2140MHz 3.84MHz Channel
BW 10MHz Space Heading
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