Page 1 of 11
Specifications subject to change without notice
UPF1010 Rev. 2
http://cree.com/
UPF1010
10W, 1.0 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with
a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-
Carrier Power Amplifiers in Class A or AB operation.
ALL GOLD metal system for highest reliability.
Industry standard package.
Low intermodulation distortion of 30dBc at 10W (PEP).
Package Type 440109
PN: UPF1010P
Package Type 440178
PN: UPF1010-178
Package Type 440095
PN: UPF1010F
Page 2 of 11
Specifications subject to change without notice
UPF1010 Rev. 2
http://cree.com/
UPF1010
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, gate connected to source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+/-
20 Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
20.0
0.2
Watts
W/
o
C
Storage Temperature Range
T
STG
-65 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Typical
Unit
Thermal Resistance, Junction to Case
jc
4.2 / 4.0*
o
C/W
*The first value applies to the 440095 package. The second value applies to the 440109 and 440178
package.
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Voltage, gate connected to source
(V
GS
= 0, I
DS
= 1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
= 26V, V
GS
= 0)
I
DSS
- -
100
A
Gate to Source Leakage current
(V
GS
= 20V, V
DS
= 0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
= 10V, I
DS
= 1mA)
V
TH
2.0
3.0
5.0
Volts
Gate Quiescent Voltage
(V
DS
= 26 V, I
DS
= 95mA)
V
GS
(on) 3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
= 10V, I
DS
= 1.0A
V
DS
(on) - 0.9
-
Volts
Forward Transconductance
(V
DS
= 10V, I
D
= 0.5A)
G
M
-
0.5 - S
Page 3 of 11
Specifications subject to change without notice
UPF1010 Rev. 2
http://cree.com/
UPF1010
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
C
ISS
-
12.4
-
pF
Output capacitance
(V
DS
= 26V, V
GS
=0V, freq= 1MHz)
C
OSS
- 8.5
-
pF
Feedback capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz
C
RSS
-
0.6
-
pF
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Linear Power Gain, Single Tone
(V
DS
=26V, I
DQ
=95mA, P
OUT
=3W, f=940 MHz)
G
L
14.0
15.5
-
dB
Compressed Power Gain, Single Tone
(V
DS
=26V, I
DQ
=95mA, P
OUT
=10W, f=940 MHz)
G
P
13.5
15.0
-
dB
Drain Efficiency, Single Tone
(V
DS
=26V, I
DQ
=95mA, P
OUT
=10W, f=940 MHz)
D
40 45 -
%
Intermodulation Distortion, Two Tone
(V
DS
=26V, I
DQ
=95mA, P
OUT
=10W PEP
f1=940 MHz, f2=940.1MHz)
IMD -
-33
-30
dBc
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=95mA, P
OUT
=10W, f=940 MHz)
VSWR* 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 4 of 11
Specifications subject to change without notice
UPF1010 Rev. 2
http://cree.com/
UPF1010
Intermodulation Distortion vs Output Power
-80
-70
-60
-50
-40
-30
-20
-10
25
30
35
40
45
P
OUT
, Output Power (dBm), PEP
I
n
t
e
r
m
o
d
u
l
a
t
i
on D
i
s
t
or
t
i
o
n
(
d
B
c
)
3rd Order
5th
7th
V
DD
= 26 V
f1 = 940.0 MHz
f2 = 940.1 MHz
I
DQ
= 95 mA
Power Gain vs Output Power
10
11
12
13
14
15
16
17
18
19
15
20
25
30
35
40
45
P
OUT
, Output Power (dBm)
Ga
in
(
d
B
)
50 mA
95 mA
I
DQ
= 140 mA
V
DD
= 26 V
f = 940 MHz
Page 5 of 11
Specifications subject to change without notice
UPF1010 Rev. 2
http://cree.com/
UPF1010
Intermodulation Distortion vs Output Power
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
25
30
35
40
45
P
OUT
, Output Power (dBm), PEP
I
M
D
3
,
3
r
d
O
r
d
e
r
I
n
t
e
r
m
od
ul
a
t
i
o
n
D
i
s
t
or
t
i
on
(d
B
c
)
I
DQ
= 50 mA
140 mA
95 mA
V
DD
= 26 V
f1 = 940.0 MHz
f2 = 940.1 MHz
Power Gain & Efficiency vs Output Power
10
11
12
13
14
15
16
17
20
25
30
35
40
45
P
OUT
, Output Power (dBm)
P
o
we
r
Ga
i
n
(
d
B
)
0
10
20
30
40
50
60
70
E
f
f
i
c
i
en
cy
(
%
)
V
DD
= 26 V
I
DQ
= 95 mA
f = 940 MHz
G
PE
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