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Электронный компонент: UPF14060

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Rev 3
Specifications subject to change without notice
UPF14060
http://cree.com/
UPF14060















Or
Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power
of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in
Class A or AB operation.
60W, 1.4 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
All Gold Metal system for highest reliability
Industry standard package
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity


Application Specific Performance (Typical, 1.4 GHz

GSM:
60 Watts
13.5 dB

EDGE:
25 Watts
13 dB

IS95 CDMA
7.5 Watts
13 dB

W-CDMA:
5 Watts 13 dB

16 QAM
35 Watts
13.5dB

Typical Edge Performance
(ETSI 300-910 GSM 05.05 v. 5.5.1)

Average Load Power
25W
PAE 30%
Power
Gain
13
dB
ACPR1
57
dBc
(30 kHz BW offset 400 kHz normalized to total
power in a 30 kHz BW)
ACPR2
66
dBc
(30 kHz BW offset 600 kHz normalized to total
power in a 30 kHz BW)
Package Type 440171
PN: UPF14060F
Package Type 440133
PN: UPF14060P
Rev 3
Specifications subject to change without notice
UPF14060
http://cree.com/
UPF14060
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+15/-0.5 Volts
Total Device Dissipation @ TC = 70
o
C
Derate above 70
o
C
P
D
100
0.8
Watts
W/
o
C
Storage Temperature Range
T
stg
-65 to
+150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
0.97
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Voltage,
Gate connected to source
(V
GS
=0, I
D
=1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
=26V, V
GS
=0)
I
DSS
- -
2.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
2.0
A
Threshold Voltage
(V
DS
=10V, I
D
=1mA)
V
TH
- 3.5
-
Volts
Gate Quiescent Voltage
(V
DS
=26 V, I
D
=540mA)
V
GS(on)
3.0 4.0
5.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(on)
- 0.14
-
Volts
Forward Transconductance
(V
DS
=10V, I
D
=5A)
Gm - 3.0
-
S
Rev 3
Specifications subject to change without notice
UPF14060
http://cree.com/
UPF14060
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance *
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
C
ISS
- - -
pF
Output capacitance *
(V
DS
= 26V, V
GS
=0V, freq = 1MHz)
C
OSS
- 52 -
pF
Feedback capacitance *
(V
DS
=26V, V
GS
=0V, freq = 1MHz)
C
RSS
- 3.0 -
pF
* Part is internally matched.

RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture
Rating Symbol
Min
Typ
Max
Unit
Two-Tone Common-Source Amplifier
Power Gain
(V
DD
=26V, I
DQ
=540mA, P
out
= 60W PEP
f
1
=1400 MHz and 1400.1 MHz,
G
ps
12.0 13 - dB
Two-Tone Drain Efficiency
(V
DD
=26V, P
out
= 60W PEP, I
DQ
=540mA
Freq=1400 MHz and 1400.1 MHz
- 35 -
%
P
out
= 1dB Compression Point
(V
DD
=26V, P
out
= 60W CW, f = 1660 MHz
P1db 60 -
- W
Input Return Loss
(V
DD
=26V, P
out
= 60W PEP, I
DQ
=540mA
f
1
=1400 MHz and 1400.1 MHz
IRL - -12 -
dB
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=540mA, Pout=60W, f=1400 MHz)
VSWR 10:1
-
-

Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.

CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.

















Rev 3
Specifications subject to change without notice
UPF14060
http://cree.com/
UPF14060
Package Dimensions
UPF14060F -Package Number 440171
























UPF14060P -Package Number 440133




















Rev 3
Specifications subject to change without notice
UPF14060
http://cree.com/
UPF14060












Disclaimer: Specifications are subject to change without notice. Cree Microwave, Inc. believes the
information contained within this data sheet to be accurate and reliable. However, no responsibility
is assumed by Cree Microwave for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Cree Microwave. Cree Microwave makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters
are the average values expected by Cree Microwave in large quantities and are provided for
information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer's
technical experts for each application. Cree Microwave products are not designed, intended, or
authorized for use as components in applications intended for surgical implant into the body or to
support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for planning, construction, maintenance or direct operation of a
nuclear facility. Cree Microwave is a trademark and Cree and the Cree logo are registered
trademarks of Cree, Inc.


Contact Information:

Cree Microwave, Inc.
160 Gibraltar Court
Sunnyvale, CA 94089-1319

Sheryle Henson (Cree Microwave--Marketing Manager) 408-962-7783
Tom Dekker (Cree Microwave--Sales Director) 919-313-5639