UPF16060
ALL GOLD metal system for highest reliability.
Industry standard package.
Internally matched for repeatable manufacturing.
High gain, high efficiency and high linearity.
Integrated ESD protection.
Excellent thermal stability.
Output Load VSWR Tolerance 10:1 all phase angles,
@ 26 V
DC
, 1660 MHz, 60W (CW) Output Power.
60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor
Power N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband Commercial and Industrial applications in the frequency band 1626 to
1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,
GSM single and multicarrier power amplifier applications in class A and AB operation at 26V.
Package Type 440171
PN: UGF16060F
Package Type 440133
PN: UGF16060P
Typical W-CDMA Performance (Test Model 1W/64 DPCH)
f1 = 1655MHz, f2 = 1665MHz
Average Output Power = 5 W
Efficiency = 15.3%
Power Gain = 14.5 dB
IM3 = -55.9 dBc (3.84 MHz BW @ f1-10MHz and f2+10MHz)
ACPR = -48dBc (3.84 MHz BW @ f1-5MHz and f2+5MHz)
V
DD
= 26V
I
DQ
= 540mA
Peak/Avg. = 10.3dB @ 0.01% Probability on CCDF
Typical EDGE Performance
Average Output Power = 25 W
Efficiency = 35.5%
Power Gain = 14.5 dB
ACPR1 = 63.9 dBc (30kHz BW offset
400kHz
normalized
to total power in a 30kHz BW).
ACPR2 = 70.4 dBc (30kHz BW offset
600kHz
normalized to
power in a 30kHz BW).
Page 1 of 7
UPF16060 Rev. 2
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+15 / 0.5
Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
100
0.77
Watts
W/
o
C
Storage Temperature Range
T
STG
-65 to
+150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
1.2
o
C/W
Electrical DC Characteristics
(Tc=
25
C
unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=5mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
=26V, V
GS
=0)
I
DSS
- -
2.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
2.0
A
Threshold Voltage
(V
DS
=V
GS
, I
D
=20mA)
V
GS(TH)
2.7 4.0
5.0
Volts
Gate Quiescent Voltage
(V
DS
=26 V, I
D
=900mA)
V
GS(Q)
3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(ON)
- -
0.15
Volts
Forward Transconductance
(V
DS
=10V, I
D
=1A)
Gm 1.0 -
-
S
AC Characteristics
(Tc=
25
C
unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input capacitance *
(V
DS
=13V, V
GS
=0V, f = 1MHz)
C
ISS
- - 110
pF
Output capacitance *
(V
DS
= 13V, V
GS
=0V, f = 1MHz)
C
OSS
- TBD -
pF
Feedback capacitance *
(V
DS
=13V, V
GS
=0V, f = 1MHz)
C
RSS
- - 5.0
pF
* Reference only.
Page 2 of 7
UPF16060 Rev. 2
RF and Functional Tests
(In Cree Microwave Broadband Fixture, Tc=25
C unless otherwise specified
)
Rating Symbol
Min
Typ
Max
Unit
CW. Power Gain, P
OUT
=60W
V
DD
=26V, I
DQ
=540mA
F = 1626MHz and 1660MHz
G
P
12 13.5 15 dB
CW. Power Gain, P
OUT
=15W
V
DD
=26V, I
DQ
=540mA
F = 1626MHz and 1660MHz
G
L
13
14.5
16
dB
CW. Drain Current, P
OUT
=90W
V
DD
=26V, I
DQ
=540mA
F= 1626MHz and 1660MHz
I
D
-
-
5.4
A
Two-Tone Common-Source Amplifier Power Gain
V
DD
=26V, I
DQ
=540mA, P
OUT
= 60 W PEP
F1= 1626MHz and F2= 1660MHz,
Tone Spacing = 100kHz
G
TT
13
14.5
- dB
Two-Tone Third Order Intermodulation Distortion
V
DD
=26V, I
DQ
=540mA, P
OUT
= 60W PEP
F1= 1626MHz and F2= 1660MHz,
Tone Spacing = 100kHz
IMD3 -
-30.5
-27.0
dBc
Two-Tone Drain Efficiency
V
DD
=26V, I
DQ
=540mA, P
OUT
= 60 W PEP
F1= 1626MHz and F2= 1660MHz,
Tone Spacing = 100kHz
D2
35 39 - %
Two Tone Drain Current
V
DD
=26V, I
DQ
=540mA, P
OUT
= 60 W PEP
F1= 1660MHz and F2= 1660.1MHz,
I
MD3
-
2.95
3.3
A
Input Return Loss
V
DD
=26V, I
DQ
=540mA, P
OUT
= 60 W PEP
F1= 1626MHz and F2= 1660MHz,
Tone Spacing = 100kHz
IRL -
-14
-9
dB
Load Mismatch Tolerance *
V
DD
=26V, I
DQ
= 540 mA, P
OUT
=60W (CW),
F=1660MHz @ all phase angles
VSWR 3:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
2. No degradation in the device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 7
UPF16060 Rev. 2
Power Gain, Efficiency vs Output Power - CW
0
2
4
6
8
10
12
14
16
5
15
25
35
45
55
65
75
Output Power (Watts) CW Avg
Pin (Watts), Power Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
PIn(w)
Gp(dB)
EFF(%)
V
DD
= 26V,
I
DQ
= 540mA
Freq = 1660 MHz
Intermodulation Distortion Products, Drain Efficiency vs Output Power
0
5
10
15
20
25
30
35
40
45
50
5
15
25
35
45
55
65
Pout, Output Power (Watts) PEP
Drain Efficiency (%), Gps
-70
-60
-50
-40
-30
-20
-10
0
IMD, Intermodulation Distortion (dBc)
Gp(dB)
EFF(%, Avg)
3rd LowIMD(dBc)
5th LowIMD(dBc)
7th LowIMD(dBc)
V
DD
= 26V, I
DQ
= 540mA
Freq = 1660 MHz, 2 Tone 100 kHz Tone Spacing
Page 4 of 7
UPF16060 Rev. 2
Efficiency, ACPR1, ACPR2 vs Output Power - EDGE
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Pout, Output Power (Watts) Avg
Dr
ain Efficiency (%), Gp (dB)
-100
-90
-80
-70
-60
-50
-40
-30
ACPR1(400kHz
)
, ACPR2(600kHz
)
Gp(dB)
EFF(%, Avg)
ACPR1(dB)
ACPR2(dB)
V
DD
= 26 V
I
DQ
= 540mA
Freq = 1660MHz
Efficiency, ACPR, IM3 vs Output Power - Wide Band CDMA
5
10
15
20
25
30
35
1
3
5
7
9
Pout, Output Power (Watts) Avg
Drain Efficiency (%), Gps (dB)
-70
-60
-50
-40
-30
-20
-10
ACPR, IM3 (dBc)
Gp(dB)
EFF(%, Avg)
UpACPR(dBc)
UpIM3(dBc)
V
DD
= 26V, I
DQ
= 540mA
Freq = 1660MHz
3.84 MHz Channel BW
10 MHz Space Heading
Page 5 of 7
UPF16060 Rev. 2
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