3-1
UPF18030
30W, 1880, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral DMOS
Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a
minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers
in Class A or AB operation.
ALL GOLD metal system for highest reliability
Industry standard package
Suggested replacement for MRF18030
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Typical EDGE Performance (ETSI 300-910 GSM 05.05 v. 5.5.1)
Average Load Power 10 W
Associated PAE 34 %
Power Gain 12.5 dB
ACPR1 (30 kHz BW offset 400 kHz normalized to total
power in a 30 kHz BW): -57 dBc
ACPR2 (30 kHz BW offset 600 kHz normalized to total
power in a 30 kHz BW): -66 dBc
3
Package Type 440162
UPF18030F
Package Type 440161
UPF18030P
3-2
UPF18030
3
Electrical DC Characteristics
(T
C
=25C unless otherwise specified)
Rating
Symbol
Min
Typ
Max
Unit
Drain to Source Voltage,
BV
DSS
65
-
-
Volts
gate connected to source
(V
GS
=0, I
D
=1mA)
Drain to Source Leakage current
I
DSS
-
-
1.0
mA
(V
DS
=28V, V
GS
=0)
Gate to Source Leakage current
I
GSS
-
1.0
A
(V
GS
=15V, V
DS
=0)
Threshold Voltage
V
TH
-
3.5
-
Volts
(V
DS
=10V, I
D
=1mA)
Gate Quiescent Voltage
V
GS
(on)
3.
4.0
5.0
Volts
(V
DS
=26 V, I
D
=250mA)
Drain to Source On Voltage
V
DS
(on)
-
0.28
Volts
(V
GS
=10V, I
D
=1A)
Forward Transconductance
Gm
2.0
-
S
(V
DS
=10V, I
D
=5A)
Maximum Ratings
Rating
Symbol
Value
Unit
Drain to Source Voltage,
BV
DSS
65
Volts
Gate connected to Source
Gate to Source Voltage
BV
GSS
+15 to -0.5
Volts
Total Device Dissipation @ TC = 70C
P
D
65
Watts
Derate above 70C
0.5
W/C
Storage Temperature Range
T
STG
-65 to +150
C
Operating Junction Temperature
T
J
200
C
Thermal Characteristics
Characteristics
Symbol
Maximum
Unit
Thermal Resistance, Junction to Case
JC
1.2
C/W
3-3
UPF18030
3
AC Characteristics
(T
C
=25C unless otherwise specified)
Rating
Symbol
Min
Typ
Max
Unit
Output Capacitance*
C
OSS
-
26
-
pF
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
Feedback Capacitance
C
RSS
-
1.5
2.2
pF
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
RF and Functional Tests
(T
C
=25C unless otherwise specified, UltraRF Test Fixture)
Rating
Symbol
Min
Typ
Max
Unit
Two-Tone Common-Source Amplifier
G
PS
11.5
12.5
-
dB
Power Gain
V
DD
=26V, I
DQ
=270mA, P
OUT
=30W PEP
f1=1805 MHz, and 1880 MHz,
Tone Spacing = 100kHz
Two-Tone Drain Efficiency
33
36
-
%
V
DD
=26V, P
OUT
=30W PEP, I
DQ
=270mA
f =1805 MHz and 1880 MHz,
Tone Spacing = 100kHz
P
OUT
, 1dB Compression Point
P1dB
30
W
V
DD
=26V, P
OUT
=30W CW, f =1880 MHz
Input Return Loss
IRL
-
-10
-
dB
V
DD
=26V, P
OUT
=30W PEP, I
DQ
=270mA
f =1805 MHz and 1880MHz, Tone
Spacing = 100kHz
Load Mismatch Tolerance
VSWR
10:1
-
-
(V
DD
=26V, I
DQ
=250mA, P
OUT
=30W
f=1880 MHz)
* For reference only.
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
3-4
UPF18030
3
3
2
1
3
2
1
A
F
4 PL.
E
2 PL.
K
L
G
H
2 PL.
C
B
D
2 PL.
J
M
MAX
10.29
MIN
10.03
MAX
.405
MILLIMETERS
9.91
1.65
1.65
15.37
7.24
0.15
9.65
1.40
.390
.065
1.40
6.99
15.11
.065
.605
.285
0.10
.006
14.73
.620
15.75
NOTES:
MIN
.395
DIM
A
.380
.055
C
D
.055
.595
.275
F
G
H
.004
E
.580
B
2. CONTROLLING DIMENSION: INCH.
1. DIMENSIONING AND TOLERANCING PER
INCHES
ANSI Y14.5M, 1982.
10.29
3.78
1.65
20.45
10.03
1.40
3.28
.405
.149
.065
20.19
.805
.395
.129
.055
J
L
K
.795
M
PIN 3. SOURCE
PIN 1. DRAIN
PIN 2. GATE
3-5
UPF18030
3
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