CY7C148
CY7C149
2
Storage Temperature
......................................-
65
C to+150
C
Ambient Temperature with
Power Applied
...................................................-
55
C to+125
C
Supply Voltage to Ground Potential
(Pin 18 to Pin 9)
....................................................-
0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
......................................................-
0.5V to +7.0V
DC Input Voltage
.................................................-
3.0V to +7.0V
Output Current into Outputs (LOW) ............................. 20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
CC
Commercial
0
C to +70
C
5V
10%
Military
[1]
-
55
C to +125
C
5V
10%
Note:
1.
T
A
is the "instant on" case temperature.
Electrical Characteristics
Over the Operating Range
[2]
Parameter
Description
Test Conditions
7C148
-
25
7C149
-
25
7C148
-
35, 45
7C149
-
35, 45
Unit
Min.
Max.
Min.
Max.
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
=
-
4.0 mA
2.4
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
6.0
2.0
6.0
V
V
IL
Input LOW Voltage
-
3.0
0.8
-
3.0
0.8
V
I
IX
Input Load Current
GND < V
I
< V
CC
-
10
10
-
10
10
A
I
OZ
Output Leakage Current
GND < V
O
< V
CC
Output Disabled
-
50
50
-
50
50
A
I
CC
V
CC
Operating
Supply Current
Max. V
CC
, CS < V
IL
,
Output Open
Com'l
90
80
mA
Mil
110
I
SB
Automatic CS
Power-Down Current
Max. V
CC
, CS > V
IH
7C148
Only
Com'l
15
10
mA
Mil
10
I
PO
Peak Power-On
Current
[3]
Max. V
CC
, CS > V
IH
7C148
Only
Com'l
15
10
mA
Mil
10
I
OS
Output Short
Circuit Current
[4]
GND < V
O
< V
CC
Com'l
275
275
mA
Mil
350
Capacitance
[5]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
C, f = 1 MHz,
V
CC
= 5.0V
8
pF
C
OUT
Output Capacitance
8
pF
Notes:
2.
See the last page of this specification for Group A subgroup testing information.
3.
A pull-up resistor to V
CC
on the CS input is required to keep the device deselected during V
CC
power-up. Otherwise current will exceed values given (CY7C148
only).
4.
For test purposes, not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
5.
Tested initially and after any design or process changes that may affect these parameters.
CY7C148
CY7C149
3
AC Test Loads and Waveforms
3.0V
5V
OUTPUT
R1481
R2
255
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
< 10 ns
< 10 ns
5V
OUTPUT
R1481
R2
255
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
1.73V
Equivalent to:
TH VENIN EQUIVALENT
ALL INPUT PULSES
C1484
C1485
167
Switching Characteristics
Over the Operating Range
[2]
Parameter
Description
7C148
-
25
7C149
-
25
7C148
-
35
7C149
-
35
7C148
-
45
7C149
-
45
Unit
Min.
Max.
Min.
Max.
Min.
Max.
READ CYCLE
t
RC
Address Valid to Address Do Not Care Time
(Read Cycle Time)
25
35
45
ns
t
AA
Address Valid to Data Out Valid Delay
(Address Access Time)
25
35
45
ns
t
ACS1
t
ACS2
Chip Select LOW to Data Out Valid (7C148 only)
25
[6]
35
45
ns
30
[7]
35
45
ns
t
ACS
Chip Select LOW to Data Out Valid (7C149 only)
15
15
20
ns
t
LZ
[8]
Chip Select LOW to Data Out On
7C148
8
10
10
ns
7C149
5
5
5
t
HZ
[8]
Chip Select HIGH to Data Out Off
0
15
0
20
0
20
ns
t
OH
Address Unknown to Data Out Unknown Time
0
0
5
ns
t
PD
Chip Select HIGH to Power-Down Delay
7C148
20
30
30
ns
t
PU
Chip Select LOW to Power-Up Delay
7C148
0
0
0
ns
WRITE CYCLE
t
WC
Address Valid to Address Do Not Care
(Write Cycle Time)
25
35
45
ns
t
WP
[9]
Write Enable LOW to Write Enable HIGH
20
30
35
ns
t
WR
Address Hold from Write End
5
5
5
ns
t
WZ
[8]
Write Enable to Output in High Z
0
8
0
8
0
8
ns
t
DW
Data in Valid to Write Enable HIGH
12
20
20
ns
t
DH
Data Hold Time
0
0
0
ns
t
AS
Address Valid to Write Enable LOW
0
0
0
ns
t
CW
[9]
Chip Select LOW to Write Enable HIGH
20
30
40
ns
t
OW
[8]
Write Enable HIGH to Output in Low Z
0
0
0
ns
t
AW
Address Valid to End of Write
20
30
35
ns
Notes:
6.
Chip deselected greater than 25 ns prior to selection.
7.
Chip deselected less than 25 ns prior to selection.
8.
At any given temperature and voltage condition, t
HZ
is less than t
LZ
for all devices. Transition is measured
500 mV from steady-state voltage with specified
loading in part (b) of AC Test Loads.
9.
The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going high. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
CY7C148
CY7C149
4
Switching Waveforms
Notes:
10. WE is HIGH for read cycle.
11. Device is continuously selected, CS = V
IL
.
12. Address valid prior to or coincident with CS transition LOW.
Read Cycle No. 1
Read Cycle No. 2
Write Cycle No. 1 (WE Controlled)
ADDRESS
50%
DATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
50%
DATA VALID
t
RC
t
ACS
t
LZ
t
PU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
t
HZ
t
PD
CS
HIGH
t
WC
DATAIN VALID
DATA UNDEFINED
HIGH IMPEDANCE
t
CW
t
AW
t
AS
t
WP
t
WA
t
DH
V
CC
SUPPLY
CURRENT
t
WZ
t
OW
t
DW
CS
WE
DATA IN
DATA OUT
ADDRESS
t
OH
C1486
C1487
C1488
[10,11]
[10,12]
CY7C148
CY7C149
5
Notes:
13. If CS goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
Switching Waveforms
(continued)
Write Cycle No. 2 (CSControlled)
t
WC
DATA UNDEFINED
HIGH IMPEDANCE
t
CW
t
AW
t
WP
t
WR
t
DH
t
WZ
t
DW
ADDRESS
CS
WE
DATA IN
DATA OUT
C1489
DATA
IN
VALID
[13]
Typical DC and AC Characteristics
1.2
1.4
1.0
0.6
0.4
0.2
4.0
4.5
5.0
5.5
6.0
1.6
1.4
1.2
1.0
0.8
-
55
25
125
-
55
25
125
1.2
1.0
0.8
NORM
AL
I
Z
E
D t
AA
120
100
80
60
40
20
0.0
1.0
2.0
3.0
4.0
OUT
P
UT
SOURCE
CU
RRENT
(m
A
)
SUPPLY VOLTAGE(V)
NORMALIZED SUPPLY CURRENT
vs.SUPPLY VOLTAGE
NORMALIZED ACCESS TIME
vs.AMBIENT TEMPERATURE
AMBIENT TEMPERATURE(C)
NORMALIZED SUPPLY CURRENT
vs.AMBIENT TEMPERATURE
AMBIENT TEMPERATURE(C)
OUTPUT VOLTAGE(V)
OUTPUT SOURCE CURRENT
vs.OUTPUT VOLTAGE
0.0
0.8
1.4
1.1
1.0
0.9
4.0
4.5
5.0
5.5
6.0
NO
RM
AL
IZ
ED t
SUPPLY VOLTAGE(V)
NORMALIZED ACCESS TIME
vs.SUPPLY VOLTAGE
120
140
100
60
40
20
0.0
1.0
2.0
3.0
4.0
OUT
P
UT
SI
NK CURRENT
(m
A
)
0
80
OUTPUT VOLTAGE(V)
OUTPUT SINK CURRENT
vs.OUTPUT VOLTAGE
0.6
0.4
0.2
0.0
NO
RM
AL
I
Z
ED I
,
I
CC
S
B
NO
RM
AL
I
Z
ED I
,
I
CC
S
B
I
SB
V
CC
=5.0V
V
IN
=5.0V
I
CC
I
CC
V
CC
=5.0V
V
CC
=5.0V
T
A
=25C
V
CC
=5.0V
T
A
=25C
I
SB
T
A
=25C
0.6
0.8
0
AA
1.3
1.2
V
IN
=5.0V
T
A
=25C
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