CYStech Electronics Corp.
Spec. No. : C907N3
Issued Date : 2003.07.31
Revised Date :
Page No. : 1/4
BC847N3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BC847N3
Description
The BC847N3 is designed for general purpose switching and amplification applications.
Complementary to BC857N3.
Features
Low current, I
C(max)
=100mA
Low voltage, BV
CEO
= 45V.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current (DC)
I
C
100 mA
Collector Current (Pulse)
I
CP
200 mA
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BC847N3
SOT-23
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C907N3
Issued Date : 2003.07.31
Revised Date :
Page No. : 2/4
BC847N3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
50 - - V
I
C
=10A
BV
CEO
45 - - V
I
C
=1mA
BV
EBO
6 - - V
I
E
=10A
I
CBO
- - 15
nA
V
CE
=30V
I
EBO
- - 100
nA
V
EB
=5V
*V
CE(sat)
1 -
- 250 mV
I
C
=10mA, I
B
=0.5mA
*V
CE(sat)
2 -
- 600 mV
I
C
=100mA, I
B
=5mA
*V
BE(sat)
1 - 700 - mV
I
C
=10mA, I
B
=0.5mA
*V
BE(sat)
2 - 900 - mV
I
C
=100mA, I
B
=5mA
*V
BE(on)
1
580 660 700 mV
V
CE
=5V, I
C
=2mA
*V
BE(on)
2 -
- 770 mV
V
CE
=5V, I
C
=10mA
*h
FE
110 - 800 -
V
CE
=5V, I
C
=2mA
f
T
100 - -
MHz
V
CE
=5V, I
E
=10mA, f=100MHz
Cob - 2.5 - pF
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
380
s, Duty Cycle
2%
Classification of h
FE
:
Rank A B C
Range 110--220 200--450 420--800
CYStech Electronics Corp.
Spec. No. : C907N3
Issued Date : 2003.07.31
Revised Date :
Page No. : 3/4
BC847N3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current --- IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C907N3
Issued Date : 2003.07.31
Revised Date :
Page No. : 4/4
BC847N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
8B
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