CYStech Electronics Corp.
Spec. No. : C306A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 1/4
BTA1015A3
CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTA1015A3
Description
The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
High voltage and high current : V
CEO
=-50V(min), I
C
=-150mA(max)
High H
FE
and excellent linearity
Complementary to BTC1815A3
.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
mA
Base Current
I
B
-50
mA
Power Dissipation
Pd
400
mW
Thermal Resistance, Junction to Ambient
R
JA
250
C/W
Junction Temperature
Tj
125
C
Storage Temperature
Tstg
-55~+125
C
TO-92
BTA1015A3
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C306A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 2/4
BTA1015A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CEO
-50 -
- V
I
C
=-1mA
I
CBO
- - -0.1
A
V
CB
=-50V
I
EBO
- - -0.1
A
V
EB
=-5V
*V
CE(sat)
-
- -0.3 V
I
C
=-100mA, I
B
=-10mA
*V
BE(sat)
-
- -1.1 V
I
C
=-100mA, I
B
=-10mA
h
FE
1
70 - 400 -
V
CE
=-6V, I
C
=-2mA
h
FE
2
25 80
V
CE
=-6V, I
C
=-150mA
f
T
80 - -
MHz
V
CE
=-10V, I
C
=-1mA
Cob - - 7 pF
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
1
Rank O Y GR
Range 70~140 120~240
200~400
CYStech Electronics Corp.
Spec. No. : C306A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 3/4
BTA1015A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
10000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
50
100
150
200
250
300
350
400
450
0
50
100
150
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C306A3-T
Issued Date : 2003.08.26
Revised Date :
Page No. : 4/4
BTA1015A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A1015
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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