CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 1/4
BTA1759A3
CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTA1759A3
Description
High breakdown voltage. (BV
CEO
=-400V)
Low saturation voltage, typical V
CE(sat)
= -0.2V at Ic / I
B
= -20mA /-2mA.
Wide SOA (safe operation area).
Complementary to BTC4505A3.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
-400 V
Collector-Emitter Voltage
V
CEO
-400 V
Emitter-Base Voltage
V
EBO
-7 V
Collector Current
I
C
-300 mA
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTA1759A3
TO-92
BBase
CCollector
EEmitter
E B C
CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 2/4
BTA1759A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
-400 -
-
V I
C
=-50A
BV
CEO
-400 -
-
V I
C
=-1mA
BV
EBO
-7 - - V
I
E
=-50A
I
CBO
- - -10
A
V
CB
=-400V
I
CER
- - -20
nA
V
CE
=-300V, R
EB
=4k
I
EBO
- - -10
A
V
EB
=-6V
*V
CE(sat)
- -0.08
-0.5 V
I
C
=-20mA, I
B
=-2mA
*V
BE(sat)
- - -1.2 V
I
C
=-20mA, I
B
=-2mA
*h
FE
100 - 270 -
V
CE
=-10V, I
C
=-10mA
f
T
-
12
-
MHz
V
CE
=-10V, I
C
=-10mA, f=5MHz
Cob - 13 - pF
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 3/4
BTA1759A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---HFE
VCE=10V
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---HFE
VCE=6V
Saturation Voltage vs Collector Current
0.01
0.1
1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(V)
VCE(sat)@IC=10IB
Saturation Voltage vs Collector Current
0.1
1
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(V)
VBE(sat@IC=10IB
On Voltage vs Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Collector Current---IC(mA)
On Voltage---(V)
VBE(on)@VCE=3V
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 4/4
BTA1759A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A1759
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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