CYStech Electronics Corp.
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 1/4
BAT54S2
CYStek Product Specification
Small Signal Schottky diode
BAT54S2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package.
Features
Guard ring protected
Low forward voltage drop
Very small plastic SMD package
Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Symbol Outline
SOD-323
BAT54S2
CYStech Electronics Corp.
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 2/4
BAT54S2
CYStek Product Specification
Absolute Maximum Ratings
Symbol Parameter
Conditions
Min Max Unit
V
R
continuous
reverse
voltage
- 30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
tp1s, 0.5 -
300
mA
I
FSM
non-repetitive peak forward current
tp<10ms
-
600
mA
Ptot
total power dissipation
Tamb25
- 200
mW
Tstg storage
temperature
-65
+150
Tj junction
temperature
-
125
Tamb
operating ambient temperature
-65
+125
Characteristics
(Ta=25
C, unless otherwise specified)
Parameter Symbol Condition
Min.
Max.
Unit
Reverse Breakdown Voltage
V
BR
I
R
=100A 30
-
V
V
F
(1) I
F
=0.1mA -
240
mV
V
F
(2) I
F
=1mA -
320
mV
V
F
(3) I
F
=10mA -
400
mV
V
F
(4) I
F
=30mA -
500
mV
Forward Voltage (
Note 1
)
V
F
(5) I
F
=100mA -
800
mV
Reverse Leakage Current (
Note 2
) I
R
V
R
=25V
-
2
A
Diode Capacitance
C
D
V
R
=1V, f=1MHz
-
10
pF
Reverse Recovery Time
trr
when switched from I
F
= 10mA
to I
R
=10mA; R
L
=100
;
measured at I
R
=1mA
- 5 ns
Notes
:
1.pulse test, tp=380s, duty cycle<2%.
2.pulse test, tp=300s, duty cycle<2%.
Thermal Characteristics
Symbol Parameter
Conditions
Value Unit
R
th j-a
thermal resistance from junction to ambient
note 1
635
K/W
Note 1 : Device mounted on a FR-4 PCB
CYStech Electronics Corp.
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 3/4
BAT54S2
CYStek Product Specification
Characteristic Curves
Forward Current & Forward Voltage
0
50
100
150
200
250
0
200
400
600
800
1000
Forward Voltage-V
F
(mV)
F
o
r
w
ar
d C
u
r
r
en
t
-
I
F
(m
A
)
Diode Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse Biased Voltage-V
R
(V)
D
i
ode C
a
p
a
c
i
t
anc
e-
C
d
(
p
F
)
CYStech Electronics Corp.
Spec. No. : C302S
Issued Date : 2004.11.26
Revised Date :
Page No. : 4/4
BAT54S2
CYStek Product Specification
SOD-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0630
0.0709 1.60 1.80 E
0.0060 REF
0.15 REF
B 0.0453
0.0531 1.15 1.35 H 0.0000
0.0040 0.00 0.10
C 0.0315
0.0394 0.80 1.00 J 0.0035
0.0070 0.089 0.177
D 0.0098
0.0157 0.25 0.40 K 0.0906
0.1063 2.30 2.70
Notes:
1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D
A
H
J
K
C
E
B
1
2
Style: Pin 1.Cathode 2.Anode
2-Lead SOD-323 Plastic Surface
Mounted Package,
CYStek Package Code: S2
Marking:
5 H
JV
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