CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 1/4
BTC4102S3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC4102S3
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
High breakdown voltage. (BV
CEO
=120V)
Complementary to BTA1579S3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Power Dissipation
Pd
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-323
BTC4102S3
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 2/4
BTC4102S3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max.
Unit
Test
Conditions
BV
CBO
120 - - V
I
C
=50A
BV
CEO
120 - - V
I
C
=1mA
BV
EBO
5 - - V
I
C
=50A
I
CBO
- -
0.5
A
V
CB
=100V
I
EBO
- -
0.5
A
V
EB
=4V
*V
CE(sat)
- - 0.5 V
I
C
=10mA, I
B
=1mA
*h
FE
56 - 390
-
V
CE
=6V, I
C
=2mA
f
T
-
140
-
MHz
V
CE
=12V, I
C
=2mA, f=100MHz
Cob -
2.5
-
pF
V
CB
=12V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
Rank
K P Q R
Range 56~120 82~180 120~270
180~390
CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 3/4
BTC4102S3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
Collector Current--- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 4/4
BTC4102S3
CYStek Product Specification
SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256 - 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787 0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051 0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079 -
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079 -
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
G1
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