CYStech Electronics Corp.
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 1/4
BTC4620T3
CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTC4620T3
Features
High breakdown voltage. (BV
CEO
=350V)
Low saturation voltage, typically V
CE
(sat) =0.1V at I
C
/I
B=
10mA/1mA.
Complementary to BTA1776T3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
350
V
Collector-Emitter Voltage
V
CEO
350
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
100
Collector Current (Pulse)
I
CP
200
mA
Power Dissipation (T
A
=25)
1.2
Power Dissipation (T
C
=25)
P
D
7
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
TO-126
BTC4620T3
E C B
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 2/4
BTC4620T3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
350 - - V
I
C
=50A, I
E
=0
BV
CEO
350 - - V
I
C
=1mA, I
B
=0
BV
EBO
5 - - V
I
E
=50A, I
C
=0
I
CBO
- -
0.1
A
V
CB
=200V, I
E
=0
I
EBO
- -
0.1
A
V
EB
=4V, I
C
=0
*V
CE(sat)
-
0.1
0.6
V
I
C
=20mA, I
B
=2mA
*V
BE(sat)
- 1 V
I
C
=20mA, I
B
=2mA
h
FE
80 -
200
-
V
CE
=10V, I
C
=10mA
f
T
-
70
-
MHz
V
CE
=30V, I
C
=10mA, f=10MHz
Cob -
2.6
-
pF
V
CB
=30V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
Rank P Q
Range 80~140
100~200
CYStech Electronics Corp.
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 3/4
BTC4620T3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
1
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---HFE
VCE = 1V
VCE = 5V
VCE = 10V
Saturation Voltage vs Collector Current
10
100
1000
10000
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT) @ IC = 10IB
VCE(SAT) @ IC = 20IB
Saturation Voltage vs Collector Current
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @ IC =10IB
Power Derating Curve
0
0.4
0.8
1.2
1.6
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
Power Derating Curve
0
2
4
6
8
10
0
50
100
150
200
Case Temperature---TC()
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 4/4
BTC4620T3
CYStek Product Specification
TO-126 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
1
-
*3
-
*3
F 0.0280
0.0319 0.71 0.81
2
-
*3
-
*3
G 0.0480
0.0520 1.22 1.32
3
-
*3
-
*3
H 0.1709
0.1890 4.34 4.80
4
-
*3
-
*3
I 0.0950
0.1050 2.41 2.66
A 0.1500
0.1539 3.81 3.91 J 0.0450
0.0550 1.14 1.39
B 0.2752
0.2791 6.99 7.09 K 0.0450
0.0550 1.14 1.39
C 0.5315
0.6102 13.50 15.50 L
- *0.0217 - *0.55
D 0.2854
0.3039 7.52 7.72 M 0.1378
0.1520 3.50 3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
Marking:
C4620
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