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Электронный компонент: BTD2150AT3

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CYStech Electronics Corp.

Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 1/4
BTD2150AT3
CYStek Product Specification


Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AT3
Features
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 200mA
Excellent current gain characteristics
Complementary to BTB1424AT3
Symbol Outline

Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
3
Collector Current (Pulse)
I
CP
7
(Note)
A
Power Dissipation (T
A
=25)
1
Power Dissipation (T
C
=25)
P
D
10
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : Pulse test, pulse width380s, duty cycle2%.
TO-126
BTD2150AT3
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.

Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 2/4
BTD2150AT3
CYStek Product Specification


Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
50 - - V
I
C
=50A, I
E
=0
BV
CEO
50 - - V
I
C
=1mA, I
B
=0
BV
EBO
5 - - V
I
E
=50A, I
C
=0
I
CBO
- - 1
A
V
CB
=40V, I
E
=0
I
EBO
- - 1
A
V
EB
=3V, I
C
=0
*V
CE(sat)
- 0.25
0.5 V
I
C
=2A, I
B
=200mA
*V
BE(sat)
- - 2 V
I
C
=2A, I
B
=200mA
*h
FE
1
100
- - -
V
CE
=2V, I
C
=20mA
*h
FE
2 180 - 820 -
V
CE
=2V, I
C
=100mA
*h
FE
3
100
- - -
V
CE
=2V, I
C
=1A
f
T
-
90
-
MHz
V
CE
=5V, I
C
=100mA, f =100MHz
Cob - 45
-
pF
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
2
Rank R S T
Range 180~390
270~560
390~820


Characteristic Curves
Grounded Emitter Output Characteristics
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
100uA
200uA
300uA
400uA
500uA
Grounded Emitter Output Characteristics
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
500uA
1mA
1.5mA
2mA
2.5mA





CYStech Electronics Corp.

Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 3/4
BTD2150AT3
CYStek Product Specification


Grounded Emitter Output Characteristics
0
500
1000
1500
2000
2500
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
4mA
6mA
8mA
2mA
10mA
Grounded Emitter Output Characteristics
0
500
1000
1500
2000
2500
3000
3500
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
5mA
10mA
15mA
20mA
25mA
Current gain vs Collector current
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Current gain---HFE
VCE=5V
VCE=1V
VCE=2V
Saturation voltage vs Collector current
1
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IB
IC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)

CYStech Electronics Corp.

Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 4/4
BTD2150AT3
CYStek Product Specification


TO-126 Dimension

*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
1
-
*3
-
*3
F 0.0280
0.0319 0.71 0.81
2
-
*3
-
*3
G 0.0480
0.0520 1.22 1.32
3
-
*3
-
*3
H 0.1709
0.1890 4.34 4.80
4
-
*3
-
*3
I 0.0950
0.1050 2.41 2.66
A 0.1500
0.1539 3.81 3.91 J 0.0450
0.0550 1.14 1.39
B 0.2752
0.2791 6.99 7.09 K 0.0450
0.0550 1.14 1.39
C 0.5315
0.6102 13.50 15.50 L
- *0.0217 - *0.55
D 0.2854
0.3039 7.52 7.72 M 0.1378
0.1520 3.50 3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
Marking:
D2150A