CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 1/4
BTD2150N3
CYStek Product Specification
Low V
CE(sat)
NPN Epitaxial Planar Transistor
BTD2150N3
Features
Low V
CE(sat)
, typically 0.25V at I
C
/ I
B
= 2A / 0.1A
Excellent current gain characteristics
Complementary to BTB1424N3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current (DC)
I
C
4
A
Collector Current (Pulse)
I
CP
7
(Note 1)
A
Power Dissipation
Pd
225
mW
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : 1. Single Pulse Pw350s, Duty2%.
SOT-23
BTD2150N3
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 2/4
BTD2150N3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
60 - - V
I
C
=100A, I
E
=0
BV
CEO
60 - - V
I
C
=1mA, I
B
=0
BV
EBO
6 - - V
I
E
=50A, I
C
=0
I
CBO
- -
100
nA
V
CB
=40V, I
E
=0
I
EBO
- -
100
nA
V
EB
=5V, I
C
=0
*V
CE(sat)
- - 0.3 V
I
C
=400mA, I
B
=20mA
*V
CE(sat)
- 0.25
0.5 V
I
C
=2A, I
B
=100mA
*V
BE(sat)
- - 1.5 V
I
C
=2A, I
B
=200mA
*h
FE
1
120
- - -
V
CE
=2V, I
C
=100mA
*h
FE
2 120 - 820 -
V
CE
=2V, I
C
=500mA
*h
FE
3
100
- - -
V
CE
=2V, I
C
=1A
f
T
-
90
-
MHz
V
CE
=5V, I
C
=0.1A, f=100MHz
Cob - 45
-
pF
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
2
Rank Q R S T
Range 120~270 180~390 270~560 390~820
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 3/4
BTD2150N3
CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Current gain---HF
E
VCE=5V
VCE=1V
VCE=2V
Saturation voltage vs Collector current
1
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IB
IC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 4/4
BTD2150N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070 0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128
0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335
0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098
0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
CF
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